Inventors:
Yuichi Goto - Austin TX, US
Eiichi Hosomi - Austin TX, US
Assignee:
Kabushiki Kaisha Toshiba - Tokyo
International Classification:
H01L 23/34
H01L 23/48
H01L 23/52
H01L 29/40
US Classification:
257724, 257786, 257773, 257924, 257E25015, 361782
Abstract:
Systems and methods for substrate layers used in attaching devices to a semiconductor package are disclosed. A novel pad structure may be employed on a substrate layer which has pads, each pad having a common electrical potential. Multiple pad openings may be employed on a single pad, allowing the attachment of multiple terminals of one or more decoupling capacitors to a single pad. These pads and pad openings can be arranged according to the type of decoupling capacitor employed, allowing a greater total pad area to be utilized in conjunction with a set of pad openings, while simultaneously allowing the multiple pad openings on the pad to be placed closer together, reducing the ESL and ESR of the path between the semiconductor and the decoupling capacitors, increasing the mechanical reliability of the semiconductor package and allowing a higher density of decoupling capacitors to be coupled to a given area.