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Tiejun Dai

from Santa Clara, CA
Age ~51

Tiejun Dai Phones & Addresses

  • 2778 Crosby Ct, Santa Clara, CA 95051
  • 201 California Ave, Sunnyvale, CA 94086 (408) 733-5886
  • San Jose, CA

Resumes

Resumes

Tiejun Dai Photo 1

Ic Design Manager

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Location:
Santa Clara, CA
Industry:
Semiconductors
Work:
Omnivision Technologies, Inc.
Ic Design Manager
Education:
Tsinghua University 1994 - 1997
Skills:
Semiconductors
Design
Ic Design
Engineering
Ic
Tiejun Dai Photo 2

Design Manager

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Location:
Santa Clara, CA
Industry:
Semiconductors
Work:
Omnivision Technologies, Inc.
Design Manager

Publications

Us Patents

Image Sensor And Pixel That Has Variable Capacitance Output Or Floating Node

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US Patent:
7193198, Mar 20, 2007
Filed:
Oct 1, 2004
Appl. No.:
10/956982
Inventors:
Tiejun Dai - Sunnyvale CA, US
Assignee:
OmniVision Technologies, Inc. - Sunnyvale CA
International Classification:
H01L 27/00
US Classification:
2502081, 348308
Abstract:
A pixel and image sensor formed in accordance with the present invention has two modes of operation: a 3T mode and a 4T mode. The present invention switches from a 3T to a 4T mode based upon the amount of illumination on the image sensor. The amount of illumination on the image sensor can be determined in a variety of ways. Once the level of illumination is determined, a decision is made by comparing the level of illumination to a threshold whether to operate in 3T mode (for high illumination) or 4T (for low illumination) mode.

Light Source Frequency Detection Circuit For Image Sensor

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US Patent:
7605359, Oct 20, 2009
Filed:
Sep 14, 2007
Appl. No.:
11/901212
Inventors:
Tiejun Dai - Sunnyvale CA, US
Jingzhou Zhang - Santa Clara CA, US
Liping Deng - Cupertino CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H01J 40/14
G01J 1/18
US Classification:
250214R, 250214 LS, 2502081, 3482261, 3482281
Abstract:
An apparatus for measuring the power frequency of a light source includes a photo-sensor, a modulator, and a logic unit. The photo-sensor generates an electrical signal that is responsive to light incident thereon from the light source. The modulator generates a modulated signal based on the electrical signal that toggles at a rate substantially proportional to the power frequency of the light source. The logic unit is coupled to receive the modulated signal and determine its toggling frequency.

Switched-Capacitor Amplifier With Improved Reset Phase

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US Patent:
7639073, Dec 29, 2009
Filed:
Nov 16, 2007
Appl. No.:
11/941869
Inventors:
Liping Deng - Cupertino CA, US
Tiejun Dai - Sunnyvale CA, US
Haidong Guo - Sunnyvale CA, US
Chieh-Chien Lin - Santa Clara CA, US
Yu-Shen Yang - San Jose CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H03F 1/02
US Classification:
330 9, 330 69
Abstract:
A switch-capacitor (“SC”) amplifier includes a two-stage operational amplifier (“OP-AMP”), an input SC network, and a feedback SC network. The two-stage OP-AMP includes a first OP-AMP stage having an output coupled to an input of a second OP-AMP stage. The input SC network is coupled to an input of the first OP-AMP stage. The feedback SC network is configured to selectively couple the output of the first OP-AMP stage to the input of the first OP-AMP stage during a first phase of operation of the SC amplifier and to couple an output of the second OP-AMP stage to the input of the first OP-AMP stage during a second phase of operation of the SC amplifier.

Light Source Frequency Detection Circuit Using Bipolar Transistor

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US Patent:
7847834, Dec 7, 2010
Filed:
Nov 19, 2007
Appl. No.:
11/942604
Inventors:
Tiejun Dai - Sunnyvale CA, US
Sohei Manabe - San Jose CA, US
Hongtao Yao - Sunnyvale CA, US
Jingzhou Zhang - Santa Clara CA, US
Liping Deng - Cupertino CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H04N 9/73
US Classification:
3482271, 3482261
Abstract:
An apparatus for measuring the power frequency of a light source includes a photo-sensitive transistor, a modulators and a logic unit. The photo-sensitive transistor generates an electrical signal that is responsive to light incident thereon from the light source. The modulator generates a modulated signal based on the electrical signal that toggles at a rate substantially proportional to the power frequency of the light source. The logic unit is coupled to receive the modulated signal and determine its toggling frequency.

Partial Row Readout For Image Sensor

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US Patent:
8081247, Dec 20, 2011
Filed:
Jun 18, 2008
Appl. No.:
12/141808
Inventors:
Tiejun Dai - Santa Clara CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H04N 3/14
H04N 5/335
H04N 9/04
US Classification:
348308, 348272
Abstract:
An image sensor includes a color filter array, sense amplifiers, multiplexing circuitry, and an output. The color filter array acquires image data using an array of M columns and N rows of pixels. The sense amplifiers are coupled to the color filter array for reading out image data from the color filter array. The multiplexing circuitry couples the sense amplifiers to the color filter array, wherein each sense amplifier is time shared across multiple columns and multiple rows. The output is coupled to receive the image data from the sense amplifiers and output the image data off-chip.

Circuit And Photo Sensor Overlap For Backside Illumination Image Sensor

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US Patent:
8101978, Jan 24, 2012
Filed:
Mar 21, 2008
Appl. No.:
12/053476
Inventors:
Tiejun Dai - Santa Clara CA, US
Hsin-Chih Tai - Cupertino CA, US
Sohei Manabe - San Jose CA, US
Hidetoshi Nozaki - Sunnyvale CA, US
Howard E. Rhodes - San Martin CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H01L 27/148
H01L 29/768
H01L 31/062
H01L 31/113
US Classification:
257228, 257292, 257293, 257E27133
Abstract:
A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.

Op-Amp Sharing With Input And Output Reset

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US Patent:
8120423, Feb 21, 2012
Filed:
Dec 6, 2010
Appl. No.:
12/960858
Inventors:
Liping Deng - Cupertino CA, US
Tiejun Dai - Santa Clara CA, US
Wei Zheng - San Jose CA, US
Xueqing Wang - San Jose CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H03F 1/02
US Classification:
330 9, 330 69, 330147, 327124, 327307
Abstract:
An operational amplifier with two pairs of differential inputs for use with an input switch capacitor network. The operational amplifier has reset devices for resetting the second pair of differential inputs while amplifying the first pair of differential inputs, and for resetting the first pair of differential inputs while amplifying the second pair of differential inputs for reducing memory effect in electronic circuits. In an embodiment, the amplifier has an additional reset device for resetting the outputs during a prophase of amplifying the first pair of differential inputs and a prophase of amplifying the second pair of differential inputs.

Circuit And Photo Sensor Overlap For Backside Illumination Image Sensor

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US Patent:
8228411, Jul 24, 2012
Filed:
Dec 15, 2011
Appl. No.:
13/327592
Inventors:
Tiejun Dai - Santa Clara CA, US
Hsin-Chih Tai - San Jose CA, US
Sohei Manabe - San Jose CA, US
Hidetoshi Nozaki - Sunnyvale CA, US
Howard E. Rhodes - San Martin CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H04N 3/14
H04N 5/335
H01L 31/062
US Classification:
348308, 348294, 348296, 257E2713, 257E27131
Abstract:
A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.
Tiejun Dai from Santa Clara, CA, age ~51 Get Report