Vincent J Zaleckas

40341496, Jul 5, 1977

Oct 20, 1975

5/624136

Vincent Joseph Zaleckas - Union NJ

Western Electric Company, Inc. - New York NY

H05K 110

174 685

A plurality of separate metallized regions on a substrate form a bondsite for a single lead to be bonded to the substrate. The metallized regions are electrically interconnected at a point removed from the bondsite. Such multiple metallized regions offer redundant bonds for each such lead to improve the mechanical strength and to improve the reliability of the bond between the lead and the substrate.

40915298, May 30, 1978

Feb 23, 1977

5/771132

Vincent Joseph Zaleckas - Union NJ

Western Electric Co., Inc. - New York NY

H01R 4302
H05K 104

29628

A plurality of separate metallized regions on a substrate form a bondsite for a single lead to be bonded to the substrate. The metallized regions are electrically interconnected at a point removed from the bondsite. Such multiple metallized regions offer redundant bonds for each such lead to improve the mechanical strength and to improve the reliability of the bond between the lead and the substrate.

41314875, Dec 26, 1978

Oct 26, 1977

5/846222

Charles W. Pearce - Emmaus PA
Vincent J. Zaleckas - Union NJ

Western Electric Company, Inc. - NY

H01L 21265

148 15

A semiconductor wafer from which devices, such as transistors, integrated circuits or the like, are to be formed is gettered. This is done by directing a high energy beam, such as a laser beam, on the surface of the wafer opposite to the surface on which the devices are to be formed. The beam is absorbed by such surface and produces lattice damage and strain in the region of such surface. The wafer is then heated at a temperature and for a time sufficient to produce a dislocation array adjacent to the region of damage. This relieves the strain and attracts mobile defects in the wafer toward the array and away from the surface of the wafer on which the devices are to be formed. The beam may also be directed on the surface of the wafer where the semiconductor devices are to be formed so long as the beam avoids those portions of such surface where the devices are to be formed.

41371003, Jan 30, 1979

Oct 26, 1977

5/846221

Vincent J. Zaleckas - Wall NJ

Western Electric Company - New York NY

B23K 2700
H01L 21268

148 15

An array of blind holes are formed in a silicon wafer with a laser and a dopant deposited therein. The wafer is then placed in a furnace for a time and at a temperature sufficient to drive the dopant into the wafer to a predetermined depth. Alternatively, the material may be applied to the wafer prior to the drilling of the blind holes and the dopant driven into the wafer as the holes are being formed.

40816532, Mar 28, 1978

Dec 27, 1976

5/754293

Jackson Chik-Yun Koo - Sau Paulo, BR
Vincent Joseph Zaleckas - Union NJ

Western Electric Co., Inc. - New York NY

B23K 2600
B05D 306

219121LM

Selected portions of a thin film coating of metal are removed from an insulative substrate by directing a coherent beam of light energy from a laser at the coating, to heat the coating and cause the evaporation and entrapment of the substrate material at the coating-substrate interface. A positive pressure builds up at the interface resulting in an explosion which removes the coating material.