Fan Yang

7802159, Sep 21, 2010

Jul 9, 2008

12/170030

Sreejit Chakravarty - Mountain View CA, US
Narendra Devta-Prasanna - Bangalore, IN
Fan Yang - Redwood City CA, US

LSI Corporation - Milpitas CA

G01R 31/28

714731, 714733

A logic built-in self-test (LBIST) module and a method of online system testing. In one embodiment, the LBIST module includes: (1) first and second data sources selectable to provide alternative respective first and second data to at least one scan chain and (2) a scan clock modifier associated with the first and second data sources and configured to drive the at least one scan chain with a selectively aperiodic modified scan clock signal.

8418008, Apr 9, 2013

Dec 18, 2008

12/337629

Sreejit Chakravarty - Mountain View CA, US
Arun Gunda - San Jose CA, US
Fan Yang - Redwood City CA, US

LSI Corporation - Milpitas CA

G01R 31/28
G06F 11/00

714731, 714726, 714733, 714744

A scan clock modifier, a method of providing a variable scan clock, an IC including a scan clock modifier and a library including a cell of a scan clock modifier. In one embodiment, the scan clock modifier includes: (1) logic circuitry configured to provide at least one selected clock signal based on a test scan clock signal and a first clock control signal, both of the test scan clock signal and the first clock control signal received from test equipment and (2) comparison logic configured to provide a scan clock signal based on the at least one selected clock signal and at least one other clock control signal received from the test equipment, wherein the first and the at least one other clock control signals are different clock control signals.

8499612, Aug 6, 2013

Apr 23, 2010

12/766743

Fan Yang - Irvine CA, US
Reginald M. Penner - Newport Beach CA, US

The Regents of the University of California - Oakland CA

G01N 7/00

73 232, 73 3106, 977957

Devices and methods for fast, sensitive hydrogen gas detection using a single palladium nanowire. In one embodiment, a hydrogen sensor comprises a palladium nanowire extending between metal contacts. The palladium nanowire is not subject to fracturing when exposed to hydrogen. The nanowire is able to rapidly and reversibly detect hydrogen as a resistance increase down to 2 ppm with excellent reproducibility and baseline stability at room temperature.

20050035919, Feb 17, 2005

Aug 15, 2003

10/641913

Fan Yang - Los Angeles CA, US
Ziming He - Irvine CA, US
Ping Peng - Irvine CA, US
Yin Qian - Hacienda Heights CA, US

H01Q009/28

343795000

A multi-band printed dipole antenna () for an electronic device includes an elongate insulative substrate (), a first, second and third pairs of dipole elements () closely and parallelly disposed on the substrate, a capacitor () and a feeder cable (). The first, second and third pair of dipole elements respectively couple with the feeder cable to form a first, second and third dipole antennas. The capacitor is used to improve the impedance matching of the second dipole antenna.

20090132959, May 21, 2009

Nov 20, 2007

11/943553

Jayavel Shanmugasundaram - Santa Clara CA, US
Nitin Gupta - New Delhi, IN
George Levchenko - San Ramon CA, US
Fan Yang - Mountain View CA, US

G06F 17/30
G06F 3/048

715810, 707102, 707E17044

The subject matter disclosed herein relates to a method and/or system for generating schema responsive to user navigation patterns.

20100023564, Jan 28, 2010

Jul 25, 2008

12/180364

Ramana Yerneni - Cupertino CA, US
Jayavel Shanmugasundaram - Santa Clara CA, US
Fan Yang - Mountain View CA, US

Yahoo! Inc. - Sunnyvale CA

G06F 17/30

707204, 707E17007

Subject matter disclosed herein relates to data management of multiple applications, and in particular, to fault tolerance for such management.

20100041177, Feb 18, 2010

Oct 16, 2009

12/581037

Fan Yang - Santa Clara CA, US
Stephen R. Forrest - Ann Arbor MI, US

THE TRUSTEES OF THE PRINCETON UNIVERSITY - Princeton NJ
THE REGENTS OF THE UNIVERSITY OF MICHIGAN - Ann Arbor MI

H01L 51/48

438 82, 257E2109

An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.

20110114177, May 19, 2011

Jul 19, 2010

12/838861

Fan Yang - Sunnyvale CA, US
Lin Zhang - San Jose CA, US
Yi Zheng - Sunnyvale CA, US
Francimar Schmitt - Santa Clara CA, US
Zheng Yuan - Cupertino CA, US

APPLIED MATERIALS, INC. - Santa Clara CA

H01L 31/0264
H01L 31/0376
H01L 31/20

136258, 438 96, 257E31048

A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first p-i-n junction cell formed on a substrate, wherein the p-i-n junction cell comprises a p-type silicon containing layer, an intrinsic type silicon containing layer formed over the p-type silicon containing layer, and a n-type silicon containing layer formed over the intrinsic type silicon containing layer, wherein the intrinsic type silicon containing layer comprises a first pair of microcrystalline layer and amorphous silicon layer.