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Kelly K Fong

from Walnut Creek, CA
Age ~39
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Related to:
Mei Jung Hsu, 67Wei-Cheng Hsu, 41Yuen Fong Sze, 75K A FongSo Meikuen Fong, 71Katherine K Fong, 33Meikuen S Fong, 71Carmen Ka Fong, 44
Connected to:
Akemi Fong, 67Alejandra Fong, 53Angus Fong, 28Anny C Fong, 56Ariana S Fong, 30Barry T Fong, 47Choifong L Fong, 75Chuping J Fong, 51Deandra Y Fong, 31Desiree D Fong, 34

Kelly Fong Phones & Addresses

  • Walnut Creek, CA
  • 7026 Fulton St APT 4, San Francisco, CA 94121 (415) 750-0341
  • Houston, TX
  • Davis, CA
  • San Luis Obispo, CA

Resumes

Resumes

Kelly Fong Photo 1

Graduate Student At University Of California, Los Angeles

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Location:
Los Angeles, California
Industry:
Research
Education:
University of California, Los Angeles 2007 - 2013
PhD, Archaeology University of California, Los Angeles 2005 - 2007
MA, Archaeology University of California, Berkeley 2001 - 2005
BA, Anthropology, Asian American Studies
Kelly Fong Photo 2

Kelly Fong

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Location:
San Francisco Bay Area
Industry:
Investment Management
Kelly Fong Photo 3

Director, Digital Operations Integration At Warner Bros. Technical Operations

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Position:
Director, Digital Operations Integration at Warner Bros. Technical Operations
Location:
United States
Industry:
Entertainment
Work:
Warner Bros. Technical Operations since 2011
Director, Digital Operations Integration
Warner Bros. Digital Distribution 2007 - 2011
Manager, Digital Operations
Warner Bros. Digital Distribution 2005 - 2007
Digital Asset Administrator, Marketing
Sony Pictures Entertainment 2005 - 2005
TV Research
Verizon 2004 - 2005
Affiliate Engineer
Education:
California State Polytechnic University-Pomona 2000 - 2004
Bachelor of Science in Business Administration, emphasis in Computer Information Systems, Computer Systems Networking and Telecommunications
Kelly Fong Photo 4

Student At University Of California, Davis

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Location:
San Francisco Bay Area
Industry:
Medical Devices

Publications

Us Patents

Low Profile Thick Film Heaters In Multi-Slot Bake Chamber

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US Patent:
6506994, Jan 14, 2003
Filed:
Jun 15, 2001
Appl. No.:
09/882769
Inventors:
Mark Fodor - Los Gatos CA
Chen-An Chen - Milipitas CA
Himanshu Pokharna - San Jose CA
Son T. Nguyen - San Jose CA
Kelly Fong - San Francisco CA
Inna Shmurun - Foster City CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
F27B 514
US Classification:
219 39, 219395, 219411, 392418, 118728, 438799, 165 58
Abstract:
A heating chamber assembly for heating or maintaining the temperature of at least one wafer, employs thick film heater plates stacked at an appropriate distance to form a slot between each pair of adjacent heater plate surfaces. The heating chamber assembly may be employed adjacent one or more processing chambers to form a preheat station separate from the processing chambers, or may be incorporated in the load lock of one or more such processing chambers. The thick film heater plates are more efficient and have a better response time than conventional heat plates. A chamber surrounding the stack of heater plates is pressure sealable and nay include a purge gas inlet for supply purge gas thereto under pressure. A door to the chamber opens to allow wafers to be inserted or removed and forms a pressure seal upon closing. The slots in the stack are alignable with the door for loading and unloading of wafers.

Aluminum-Plated Components Of Semiconductor Material Processing Apparatuses And Methods Of Manufacturing The Components

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US Patent:
8128750, Mar 6, 2012
Filed:
Mar 29, 2007
Appl. No.:
11/730049
Inventors:
Ian J. Kenworthy - Mountain View CA, US
Kelly W. Fong - San Mateo CA, US
Leonard J. Sharpless - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C23C 16/00
C23C 14/00
US Classification:
118715, 118 50
Abstract:
Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.

Aluminum-Plated Components Of Semiconductor Material And Methods Of Manufacturing The Components

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US Patent:
8282987, Oct 9, 2012
Filed:
Jan 31, 2012
Appl. No.:
13/362169
Inventors:
Ian J. Kenworthy - Mountain View CA, US
Kelly W. Fong - San Mateo CA, US
Leonard J. Sharpless - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B05D 5/12
C25D 3/00
US Classification:
427 80, 205261
Abstract:
Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.

Edge Rings For Electrostatic Chucks

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US Patent:
8469368, Jun 25, 2013
Filed:
Aug 12, 2009
Appl. No.:
12/540186
Inventors:
Ian Jared Kenworthy - Mountain View CA, US
Kelly Fong - San Mateo CA, US
Michael C. Kellogg - Pleasanton CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B23B 31/28
US Classification:
279128, 361234, 414941
Abstract:
A disclosed device for use with an electrostatic chuck configured to hold a substrate in a plasma environment comprises an edge ring configured to be placed either in contact with portions of only a ceramic top piece, a base plate, or coupled to the base plate through a plurality of pins and pin slots. The edge ring is further configured to be concentric with the ceramic top piece. In one embodiment, the edge ring includes an inner edge having an edge step arranged to provide mechanical coupling between the edge ring and the outer periphery of the ceramic top piece. The edge ring further includes an outer edge and a flat portion located between the inner edge and the outer edge. The flat portion is arranged to be both horizontal when the edge ring is placed around the outer periphery of the ceramic top piece and parallel to the substrate.

Integration Of Remote Plasma Generator With Semiconductor Processing Chamber

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US Patent:
6387207, May 14, 2002
Filed:
Apr 28, 2000
Appl. No.:
09/561325
Inventors:
Karthik Janakiraman - Santa Clara CA
Kelly Fong - San Francisco CA
Chen-An Chen - San Jose CA
Paul Le - San Jose CA
Rong Pan - San Francisco CA
Shankar Venkataraman - Santa Clara CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2100
US Classification:
156345, 118723 ME
Abstract:
A compact, self-contained remote plasma generator is mounted on the lid of a semiconductor processing chamber to form an integrated substrate processing system. The remote plasma generator is activated in a clean operation to generate cleaning plasma species to provide better cleaning of the chamber and lower perfluorocarbon emissions than in situ plasma clean processes. A three-way valve is adjustable to control gas flow to the chamber. During the clean operation, the three-way valve directs a cleaning plasma precursor from a first gas line to the remote plasma generator to generate cleaning plasma species which are flowed to the chamber for cleaning deposits therein. During a deposition process, the three-way valve directs a first process gas from the flat gas line to the chamber, bypassing the remote plasma generator. The first process gas is typically mixed with a second process gas supplied from a second gas line in a mixing device prior to entering the chamber for depositing a layer on a substrate disposed therein.
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Kelly K Fong from Walnut Creek, CA, age ~39 Get Report