Michael Willwerth Phones & Addresses
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Sunnyvale, CA
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San Jose, CA
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26269 Alexander Ct, Los Altos, CA 94022 (650) 941-5449
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Los Altos Hills, CA
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Saratoga, CA
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3847 Rincon Ave, Campbell, CA 95008 (408) 374-4025 (408) 374-7355
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Mountain View, CA
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3847 W Rincon Ave, Campbell, CA 95008
Emails
m***5@xo.com
Publications
Us Patents
Method And Apparatus For Performing Limited Area Spectral Analysis
View pageUS Patent:
7330244, Feb 12, 2008
Filed:
Dec 28, 2006
Appl. No.:
11/617221
Inventors:
Matthew F. Davis - Brookdale CA, US
Lei Lian - Santa Clara CA, US
Yasuhiro Uo - Chiba, JP
Michael D. Willwerth - Campbell CA, US
Andrei Ivanovich Netchitaliouk - Visaginas LT, LT
Lei Lian - Santa Clara CA, US
Yasuhiro Uo - Chiba, JP
Michael D. Willwerth - Campbell CA, US
Andrei Ivanovich Netchitaliouk - Visaginas LT, LT
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01N 21/00
US Classification:
356 72
Abstract:
A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.
Method And Apparatus For Performing Limited Area Spectral Analysis
View pageUS Patent:
7602484, Oct 13, 2009
Filed:
Dec 7, 2007
Appl. No.:
11/952748
Inventors:
Matthew F. Davis - Brookdale CA, US
Lei Lian - Santa Clara CA, US
Yasuhiro Uo - Chiba, JP
Michael D. Willwerth - Campbell CA, US
Andrei Ivanovich Netchitaliouk - Visaginas, LT
Lei Lian - Santa Clara CA, US
Yasuhiro Uo - Chiba, JP
Michael D. Willwerth - Campbell CA, US
Andrei Ivanovich Netchitaliouk - Visaginas, LT
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01N 21/00
US Classification:
3562375, 356445
Abstract:
A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.
High Ac Current High Rf Power Ac-Rf Decoupling Filter For Plasma Reactor Heated Electrostatic Chuck
View pageUS Patent:
7777152, Aug 17, 2010
Filed:
Feb 6, 2007
Appl. No.:
11/671927
Inventors:
Valentin N. Todorov - Palo Alto CA, US
Michael D. Willwerth - San Ramon CA, US
Alexander Paterson - San Jose CA, US
Brian K. Hatcher - San Jose CA, US
John P. Holland - San Jose CA, US
Michael D. Willwerth - San Ramon CA, US
Alexander Paterson - San Jose CA, US
Brian K. Hatcher - San Jose CA, US
John P. Holland - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B23K 9/02
H01P 5/08
C23C 16/00
H01P 5/08
C23C 16/00
US Classification:
21912154, 333 173, 118723 E
Abstract:
An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3. 5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end.
Cathode Liner With Wafer Edge Gas Injection In A Plasma Reactor Chamber
View pageUS Patent:
7832354, Nov 16, 2010
Filed:
Sep 5, 2007
Appl. No.:
11/899614
Inventors:
Dan Katz - Saratoga CA, US
David Palagashvili - Mountain View CA, US
Michael D. Willwerth - Campbell CA, US
Valentin N. Todorow - Palo Alto CA, US
Alexander M. Paterson - San Jose CA, US
David Palagashvili - Mountain View CA, US
Michael D. Willwerth - Campbell CA, US
Valentin N. Todorow - Palo Alto CA, US
Alexander M. Paterson - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
US Classification:
118723R, 118728
Abstract:
The disclosure concerns a wafer support for use in a plasma reactor chamber, in which the wafer support has a wafer edge gas injector adjacent and surrounding the wafer edge.
Method Of Processing A Workpiece In A Plasma Reactor With Independent Wafer Edge Process Gas Injection
View pageUS Patent:
7879250, Feb 1, 2011
Filed:
Sep 5, 2007
Appl. No.:
11/899613
Inventors:
Dan Katz - Saratoga CA, US
David Palagashvili - Mountain View CA, US
Michael D. Willwerth - Campbell CA, US
Valentin N. Todorow - Palo Alto CA, US
Alexander M. Paterson - San Jose CA, US
David Palagashvili - Mountain View CA, US
Michael D. Willwerth - Campbell CA, US
Valentin N. Todorow - Palo Alto CA, US
Alexander M. Paterson - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B44C 1/22
C03C 15/00
C03C 25/68
C23F 1/00
C03C 15/00
C03C 25/68
C23F 1/00
US Classification:
216 67, 438710, 15634548
Abstract:
The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
Gas Flow Equalizer Plate Suitable For Use In A Substrate Process Chamber
View pageUS Patent:
8075728, Dec 13, 2011
Filed:
Feb 28, 2008
Appl. No.:
12/038887
Inventors:
Ajit Balakrishna - Sunnyvale CA, US
Shahid Rauf - Pleasanton CA, US
Andrew Nguyen - San Jose CA, US
Michael D. Willwerth - Campbell CA, US
Valentin N. Todorow - Palo Alto CA, US
Shahid Rauf - Pleasanton CA, US
Andrew Nguyen - San Jose CA, US
Michael D. Willwerth - Campbell CA, US
Valentin N. Todorow - Palo Alto CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23F 1/00
H01L 21/306
C23C 16/455
C23C 16/06
C23C 16/22
H01L 21/306
C23C 16/455
C23C 16/06
C23C 16/22
US Classification:
15634526, 15634551, 118715
Abstract:
A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.
Electrostatic Chuck With Reduced Arcing
View pageUS Patent:
8270141, Sep 18, 2012
Filed:
Sep 17, 2010
Appl. No.:
12/884967
Inventors:
Michael D. Willwerth - Campbell CA, US
David Palagashvili - Mountain View CA, US
Michael G. Chafin - Santa Clara CA, US
David Palagashvili - Mountain View CA, US
Michael G. Chafin - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H02T 23/00
US Classification:
361234, 361233, 1563451, 279128, 269 8, 269903
Abstract:
Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.
Low Sloped Edge Ring For Plasma Processing Chamber
View pageUS Patent:
8287650, Oct 16, 2012
Filed:
Sep 10, 2008
Appl. No.:
12/207695
Inventors:
Changhun Lee - San Jose CA, US
Michael D. Willwerth - Campbell CA, US
Hoan Hguyen - Milpitas CA, US
Michael D. Willwerth - Campbell CA, US
Hoan Hguyen - Milpitas CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
C23C 16/50
C23F 1/00
H01L 21/306
C23C 16/50
C23F 1/00
H01L 21/306
US Classification:
118728, 118715, 1563451
Abstract:
Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees.