Robert W Small

6498131, Dec 24, 2002

Aug 7, 2000

09/632899

Robert J. Small - Dublin CA

EKC Technology, Inc. - Hayward CA

C11D 168

510175, 510178, 510505

The present invention relates to chemical compositions and methods of use for cleaning CMP equipment, including the interiors of delivery conduits carrying CMP slurry to the necessary sites. The chemical compositions of the present invention are also useful for post-CMP cleaning of the wafer itself. Three classes of cleaning compositions are described, all of which are aqueous solutions. One class operates in a preferable pH range from about 11 to about 12 and preferably contains one or more non-ionic surfactants, one or more simple amines, a surfactant or sticking agent, such as one or more soluble dialcohol organic compounds, and one or more quaternary amines. A second class of cleaning composition operates in a preferable pH range of approximately 8. 5 and contains one or more of citric acid, lactic acid, and oxalic acid. A third class of compositions is acidic, having a preferable pH range from about 1.

6546939, Apr 15, 2003

Nov 3, 2000

09/704688

Robert J. Small - Dublin CA

EKC Technology, Inc. - Hayward CA

B08B 304

134 13, 134 12, 134 3, 134 39, 510175, 510176, 510178, 510499, 510504, 510245, 510254, 438692

A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper or aluminum surface is an aqueous solution with a pH between about 3. 5 and about 7. The composition contains a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper or aluminum surface comprises applying the above composition to the copper or aluminum surface, and polishing the surface in the presence of the composition.

6635186, Oct 21, 2003

Jan 7, 1999

09/226996

Robert J. Small - Dublin CA
Laurence McGhee - Duntocher, GB
David J. Maloney - Livermore CA
Maria L. Peterson - Menlo Park CA

EKC Technology, Inc. - Hayward CA

H01L 21302

216 88, 216 89, 216 99, 216100, 216108, 252 791, 252 792, 438692, 438693

A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material.

6638326, Oct 28, 2003

Sep 25, 2001

09/965233

Robert J. Small - Dublin CA
Maria Peterson - Belmont CA
Tuan Truong - San Jose CA
Melvin Keith Carter - Los Gatos CA
Lily Yao - Newark CA

EKC Technology, Inc. - Hayward CA

C09G 102

51307, 51308, 51309, 106 3, 252 792, 252 794, 510175, 510397, 510402

The present invention relates to compositions for the chemical mechanical planarization (âCMPâ) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

6645930, Nov 11, 2003

Jul 10, 2000

09/613507

Danny L. Wallis - Morgan Hill CA
Robert J. Small - Dublin CA

EKC Technology, Inc. - Hayward CA

C11D 1704

510438, 510109, 510110, 510363, 510439, 510477, 510488, 4283202, 210501, 210924, 210925, 134 42, 134 6

Clean room wipe products, methods of preparing them, and methods of using them are described. The clean room wipes are intended for use in cleaning up alkaline contaminants in clean room environments. The wipes contain impregnated acidic solutions, e. g. , solutions of organic acids and optionally solvents, which are intended to reduce or eliminate the possibility of spontaneous combustion of the contaminated wipes, that is, when the wipes are used to contain spills of alkaline products such as hydroxylamine-based products and other caustic based formulations.

6756308, Jun 29, 2004

Feb 13, 2001

09/783069

Robert J. Small - Dublin CA
Xiaowei Shang - Sunnyvale CA

EKC Technology, Inc. - Hayward CA

H01L 21302

438692, 438691

The present invention relates to the use of ozone (O ) as a reagent in chemical mechanical planarization either in aqueous solution or as a gas directly impinging on the surface to be planarized. An aqueous solution containing ozone may optionally contain abrasive particles and/or additional CMP reagents co-dissolved with the ozone including carbonate and bicarbonate anions, and organic acids such as formic, oxalic, acetic and glycol. Abrasives that may be added include alumina, silica, spinel, ceria, zirconia. Typical concentrations of ozone aqueous solution are in the range from approximately 1 part-per-million up to saturation. Ammonium salts, particularly ammonium carbonate, facilitate planarization in cooperation with ozone-containing aqueous solution. Low k dielectric materials, organic as well as inorganic, and difficult to oxidize metals can be planarized with ozone reagents pursuant to the present invention.

6777380, Aug 17, 2004

Jul 10, 2001

09/903064

Robert J. Small - Dublin CA
Bakul P. Patel - Pleasanton CA
Wai Mun Lee - Fremont CA
Douglas Holmes - Bridge of Weir, GB
Jerome Daviot - Glasgow, GB
Chris Reid - Glasgow, GB

EKC Technology, Inc. - Hayward CA

G03C 500

510176, 510175, 510245, 430329, 134 13, 252 791

A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0. 01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

6852682, Feb 8, 2005

Oct 16, 2002

10/273100

Robert J. Small - Dublin CA, US

EKC Technology, Inc. - Hayward CA

C11D001/68

510175, 510178, 510505

The present invention relates to chemical compositions and methods of use for cleaning CMP equipment, including the interiors of delivery conduits caring CMP slurry to the necessary sites. The chemical compositions of the present invention are also useful for post-CMP cleaning of the wafer itself. Three classes of cleaning compositions are described, all of which are aqueous solutions. One class operates in a preferable pH range from about 11 to about 12 and preferably contains one or more non-ionic surfactants, one or more simple amines, a surfactant or sticking agent, such as one or more soluble dialcohol organic compounds, and one or more quaternary amines. A second class of cleaning composition operates in a preferable pH range of approximately 8. 5 and contains one or more of citric acid, lactic acid, and oxalic acid. A third class of compositions is acidic, having a preferable pH range from about 1.