Search

Shih H Chen

from Hacienda Heights, CA
Age ~67
Get Report
Also known as:
Shih Y Chen, Shinde Deh Chen, Shin Deh Chen, Shinde D Chen, Shin D Chen, H Deh Chen, H Chen, Sun Chen, Deh Chen H, Chen Shih-Hsun
Related to:
Julie L Chen, 78Chihwen Yuan Wen, 64Wuchieh ChenHui L Yun, 57Y ChenFenni C Chen, 49Qiushen Chen Sheng, 70Nelson ChenHidy Chao Wu, 55Charles C Jiang, 69Jing-Wu ChenChristopher D Chen, 42Chunnan R Liu, 65Dai J ChenWuchieh Chieh Chenwu, 92Xiaohui Cai, 51Jinglun Li, 67Bao Hui, 91Su Y Chen, 79Julius Yu Jiang, 54Ming T Chen, 85
Connected to:
Adela Chen, 45Aidong Chen, 57Aile Chen, 40Aiqun Chen, 57Aishun Chen, 47Aiting Chen, 39Albertina L Chen, 78Alec C Chen, 61Allison Y Chen, 42Andrea H Chen, 41

Shih Chen Phones & Addresses

  • Hacienda Heights, CA
  • Ontario, CA
  • Pleasanton, CA
  • Hacienda Heights, CA
  • Diamond Bar, CA

Resumes

Resumes

Shih Chen Photo 1

Shih Chen

View page
Shih Chen Photo 2

Software Engineer

View page
Location:
Rowland Heights, CA
Industry:
Computer Software
Work:
One World Direct
Software Engineer
Spec D Tuning Aug 2015 - Aug 2018
It Software Developer
Lee Kum Kee Usa Jan 2014 - May 2015
Front-End Website Developer
California State University, Long Beach Jan 2013 - Dec 2013
I.t Support Technician
Moldex3D (Coretech System Co., Ltd.) Mar 2006 - Dec 2008
Cae Engineer
Education:
California State University, Long Beach 2011 - 2014
Masters, Computer Science National Yunlin University of Science and Technology 1999 - 2003
Bachelors, Mechanical Engineering
Skills:
Java
Microsoft Office
Html
Sql
Javascript
Php
Linux
Asp.net
Mysql
Software V&V
Python
C#
Finite Element Analysis
Software Development
Computational Fluid Dynamics
Jquery
Node.js
Restful Webservices
Vmware Esx
Git
Wordpress
Bootstrap
Java Database Connectivity
Ruby
Internet Information Services
Microsoft Sql Server
Transact Sql
Ansys
Autocad
Express.js
Open Database Connectivity
Finite State Machines
Clojure
Erlang
Plastics Molding Injection Simulations
Rhino3D Cad Design
Wireshark
.Net Framework
Web Development
Algorithms
Databases
Cascading Style Sheets
Docker
Intellij Idea
Css3
C
Eclipse
Visual Studio
Cad/Cam/Cae
Solidworks
Netbeans
Oracle Sql
Json
Selenium Testing
Xml
Angularjs
Wcf Services
Proxmox
Languages:
English
Mandarin
Taiwanese
Shih Chen Photo 3

Intern

View page
Work:
Ucla Extension
Intern
Shih Chen Photo 4

Chairman

View page
Industry:
Non-Profit Organization Management
Work:
Ob Taiwan
Chairman
Shih Chen Photo 5

Housekeeper

View page
Work:

Housekeeper

Business Records

Name / Title
Company / Classification
Phones & Addresses
Shih Chen
President
USELEC CORP
Whol Electronic Parts-Equipment
4966 El Camino Real #112, Los Altos, CA 94022
(650) 968-2828
Shih K. Chen
Principal
Total Health Healing Center
Health/Allied Services
11434 Ventura Blvd, North Hollywood, CA 91604
(818) 760-7401
Shih Chun Chen
President
Pacific Oasis Enterprise Inc
International Trade and Development · Whol Homefurnishings Whol Men's/Boy's Clothing · Importers
1612 Chico Ave #J, South El Monte, CA 91733
8413 Secura Way, Whittier, CA 90670
(626) 443-2464
Shih Ying Chen
MAX L. G., INC
17506 Colima Rd #202, Rowland Heights, CA 91748
17506 Colima Rd, Whittier, CA 91748
1249 S Diamond Bar Blvd, Pomona, CA 91765
Shih Chun Chen
President
Jan's Copper Kitchen
1612 Chico Ave, El Monte, CA 91733
Shih Chang Chen
President
A. C. IMAGE TECHNOLOGY INC
408 N Chalburn Ave, West Covina, CA 91790
Shih Chun Chen
President
MR. BRITE, INC
1612 Chico Ave STE J, South El Monte, CA 91733
Shih Keng Chen
President
PHILIPPO MANUFACTURING CORPORATION
1310-1312 John Reed Ct, Hacienda Heights, CA 91745
1310 John Reed Ct, Whittier, CA 91745

Publications

Us Patents

Doping Aluminum In Tantalum Silicide

View page
US Patent:
8592305, Nov 26, 2013
Filed:
Nov 15, 2011
Appl. No.:
13/296715
Inventors:
Xinliang Lu - Fremont CA, US
Seshadri Ganguli - Sunnyvale CA, US
Shih Chung Chen - Cupertino CA, US
Atif Noori - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Mei Chang - Saratoga CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/4763
US Classification:
438649, 438683, 257E212
Abstract:
Provided are methods of providing aluminum-doped TaSifilms. Doping TaSifilms allows for the tuning of the work function value to make the TaSifilm better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSifilm with an aluminum-containing compound. Another method relates to depositing a TaSifilm, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSifilm using tantalum, aluminum and silicon precursors.

N-Metal Film Deposition With Initiation Layer

View page
US Patent:
20120322250, Dec 20, 2012
Filed:
Jun 18, 2012
Appl. No.:
13/525604
Inventors:
Seshadri Ganguli - Sunnyvale CA, US
Xinliang Lu - Fremont CA, US
Atif Noori - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Shih Chung Chen - Cupertino CA, US
Mei Chang - Saratoga CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/283
US Classification:
438585, 257E2119
Abstract:
Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.

N-Metal Film Deposition With Initiation Layer

View page
US Patent:
20120322262, Dec 20, 2012
Filed:
Jun 18, 2012
Appl. No.:
13/525610
Inventors:
Seshadri Ganguli - Sunnyvale CA, US
Xinliang Lu - Fremont CA, US
Atif Noori - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Shih Chung Chen - Cupertino CA, US
Mei Chang - Saratoga CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/28
US Classification:
438685, 257E21158
Abstract:
Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAlC. These initiation layers can be used to deposit TaC.

Methods For Manufacturing Metal Gates

View page
US Patent:
20130295759, Nov 7, 2013
Filed:
Apr 18, 2013
Appl. No.:
13/865285
Inventors:
Xinliang Lu - Fremont CA, US
Seshadri Ganguli - Sunnyvale CA, US
Atif Noori - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Shih Chung Chen - Cupertino CA, US
Yu Lei - Foster City CA, US
Xinyu Fu - Fremont CA, US
Wei Tang - Santa Clara CA, US
Srinivas Gandikota - Santa Clara CA, US
International Classification:
H01L 29/66
US Classification:
438591
Abstract:
Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.

Deposition Of N-Metal Films Comprising Aluminum Alloys

View page
US Patent:
20140017408, Jan 16, 2014
Filed:
Jun 28, 2013
Appl. No.:
13/930194
Inventors:
Srinivas Gandikota - Santa Clara CA, US
Xinliang Lu - Fremont CA, US
Shih Chung Chen - Cupertino CA, US
Wei Tang - Santa Clara CA, US
Jing Zhou - Milpitas CA, US
Seshadri Ganguli - Sunnyvale CA, US
David Thompson - San Jose CA, US
Jeffrey W. Anthis - San Jose CA, US
Atif Noori - Saratoga CA, US
Faruk Gungor - San Jose CA, US
Dien-Yeh Wu - San Jose CA, US
Mei Chang - Saratoga CA, US
Xinyu Fu - Fremont CA, US
Yu Lei - Foster City CA, US
International Classification:
C23C 18/00
US Classification:
427343
Abstract:
Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl, TaCland HfClto provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)AlH], wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

Methods For Controlling N.sub.2 O Emissions And For The Reduction Of No.sub . .Sub.x Emissions In Combustion Systems While Controlling N.sub.2 O Emissions

View page
US Patent:
52700259, Dec 14, 1993
Filed:
Mar 25, 1992
Appl. No.:
7/858316
Inventors:
Loc Ho - Anaheim CA
Shih L. Chen - Irvine CA
William R. Seeker - San Clemente CA
Peter M. Maly - El Toro CA
Assignee:
Energy & Environmental Research Corp. - Irvine CA
International Classification:
C01B 2100
C01B 1700
C01B 1720
B01J 800
US Classification:
423235
Abstract:
Method for controlling N. sub. 2 O emissions from stationary combustion systems having variable flue gas temperatures are disclosed. The N. sub. 2 O emissions are controlled by the introduction of a N. sub. 2 O control agent, such as an alkaline compound, into the effluent stream. In addition, the present invention discloses methods for controlling N. sub. 2 O emissions from stationary combustion systems having variable flue gas temperatures while reducing NO. sub. x emissions. Use of an NO. sub. x reducing agent and an N. sub. 2 O control agent, such as urea and monosodium glutamate, enlarges the temperature window for effective selective noncatalytic NO. sub. x reduction while significantly eliminating N. sub. 2 O emissions commonly experienced with urea injection. Further, the present invention discloses methods for controlling N. sub.

Method For Forming Rigid Composite Preforms

View page
US Patent:
47418737, May 3, 1988
Filed:
Apr 15, 1986
Appl. No.:
6/852066
Inventors:
Mel J. Fischer - Alameda CA
Hollis O. Davis - Alameda CA
Shih Huei Chen - San Leandro CA
Assignee:
Kaiser Aerotech, a Division of Sowa & Sons - San Leandro CA
International Classification:
B29B 1116
B29C 5358
US Classification:
264 25
Abstract:
Rigidized composite preforms are fabricated by first serving individual reinforcement strands with a thread of a thermoplastic material. After shaping the reinforcement strands into a desired geometry, the shaped strands are heated to melt the thermoplastic threads. By then cooling the shaped reinforcement strands, the thermoplastic material solidifies and acts as an adhesive or glue in holding the preform together in a rigid fashion. Such rigid preforms are particularly suitable for handling, storage and transportation to other locations and media prior to densification. Densification may be performed by conventional techniques to produce the final composite article. Pyrolysis of the matrices and subsequent densification of the matrix may be accomplished.

Methods Of Reducing No.sub.x And So.sub.x Emissions From Combustion Systems

View page
US Patent:
48615676, Aug 29, 1989
Filed:
Apr 16, 1987
Appl. No.:
7/039324
Inventors:
Michael P. Heap - Corona Del Mar CA
Shih L. Chen - Irvine CA
James M. McCarthy - Laguna Beach CA
David W. Pershing - Salt Lake City UT
Assignee:
Energy and Environmental Research Corporation - Irvine CA
International Classification:
C01B 2100
C01B 1700
B01J 800
US Classification:
423235
Abstract:
The present invention relates to methods for selectively reducing NO. sub. x so that nitrogen can be removed from emission effluent streams and NO. sub. x emissions can be reduced to very low levels. In addition, the present invention teaches a method whereby NO. sub. x and SO. sub. x may be simultaneously removed from the effluent stream. The present invention teaches the reduction of NO. sub. x with cyanuric acid. Initially, cyanuric acid is decomposed to form decomposition products. The reaction of cyanuric acid to produce its decomposition products, such as isocyanic acid or related reaction intermediates, takes place in an oxygen-free, fuel rich, decomposition zone with the reaction temperature in the range of from about 1000. degree. F. to about 3000. degree. F. After the cyanuric acid is decomposed in the absence of oxygen, the decomposition stream is mixed with the effluent stream containing NO. sub. x.
Control profile
Shih H Chen from Hacienda Heights, CA, age ~67 Get Report