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Uma Srinivansan Srinivasan

from Rocklin, CA
Age ~56
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Also known as:
Srinivasan V Sangameswara, Uma V Srinivasan, Uma Sangameswara, Venkateswara S Srinivasan, Sangameswara V Srinivasan, Srinivasan V Cisgameswara, Sa V Srinivasan, Srinivasan Venkateswara, V Sa Srinivasan, Sangameswara Uma Srinivansan
Phone and address:
5931 Tanus Cir, Rocklin, CA 95677
(916) 412-1144
Related to:
Pramod Srinivasan, 48Radhakrishnan Venkatesh, 80Prashantha K Srinivasan, 54Savitha Venkatesh, 55Aditya Srinivasan, 28Venkatesh Radhakrishnan, 59S VenkateswaraVenkatesh Savitha, 55P Srimivasan
Connected to:
Aarthi Srinivasachari, 42Aarti Srinivasan, 35Ananthakumar Srinivasan, 46Anjana Srinivas, 28Balakumar Srinivasan, 34Bhargavi Srinivasan, 60Chandrashekar Srinivasan, 51Chandrika Srinivasan, 56Cristina R Srinivasiah, 75Gnanakumar K Srinivasan, 52

Uma Srinivasan Phones & Addresses

  • 5931 Tanus Cir, Rocklin, CA 95677 (916) 412-1144
  • Roseville, CA
  • 1905 Birchwood Ct, North Brunswick, NJ 08902
  • 71 Slate Creek Dr, Buffalo, NY 14227
  • 71 Slate Creek Dr APT 10, Buffalo, NY 14227

Work

Company: Kaiser permanente 2004 to 2010 Position: Physician

Education

School / High School: University Of Calcutta National Med College 1992

Skills

Healthcare Management • Hospitals • Clinical Research • Healthcare • Medicine • Emr • Healthcare Information Technology • Patient Safety • Medical Education • Pediatrics • Critical Care • Inpatient • Board Certified

Languages

English

Awards

Healthgrades Honor Roll

Ranks

Certificate: Internal Medicine, 2004

Industries

Hospital & Health Care

Specialities

Internal Medicine

Professional Records

License Records

Uma Srinivasan

License #:
24409 - Expired
Issued Date:
Feb 17, 2006
Renew Date:
Feb 17, 2006
Expiration Date:
May 31, 2008
Type:
Certified Public Accountant

Medicine Doctors

Uma Srinivasan Photo 1

Dr. Uma Srinivasan, Roseville CA - MD (Doctor of Medicine)

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Specialties:
Internal Medicine
Address:
1001 Riverside Ave, Roseville, CA 95678
(916) 784-4000 (Phone)
Certifications:
Internal Medicine, 2004
Awards:
Healthgrades Honor Roll
Languages:
English
Education:
Medical School
University Of Calcutta National Med College
Graduated: 1992
Uma Srinivasan Photo 2

Uma Srinivasan

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Specialties:
Internal Medicine
Work:
Kaiser Permanente Medical Group
1600 Eureka Rd, Roseville, CA 95661
(916) 784-4000 (phone), (916) 746-3997 (fax)
Education:
Medical School
Calcutta Nat'l Med Coll, Univ of Calcutta, Calcutta, West Bengal
Graduated: 1992
Procedures:
Destruction of Benign/Premalignant Skin Lesions
Conditions:
Acute Bronchitis
Acute Upper Respiratory Tract Infections
Contact Dermatitis
Gastroesophageal Reflux Disease (GERD)
Acute Sinusitis
Languages:
English
Description:
Dr. Srinivasan graduated from the Calcutta Nat'l Med Coll, Univ of Calcutta, Calcutta, West Bengal in 1992. She works in Roseville, CA and specializes in Internal Medicine. Dr. Srinivasan is affiliated with Kaiser Permanente Medical Center - Roseville.
Uma Srinivasan Photo 3

Uma Subramanian Srinivasan, Roseville CA

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Specialties:
Internal Medicine
Hematology & Oncology
Work:
Roseville Medical Center
1001 Riverside Ave, Roseville, CA 95678
Education:
Calcutta Medical College (1992)

Resumes

Resumes

Uma Srinivasan Photo 4

Medical Doctor

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Location:
Rocklin, CA
Industry:
Hospital & Health Care
Work:
Kaiser Permanente 2004 - 2010
Physician
Kaiser Permanente 2004 - 2010
Medical Doctor
Education:
University at Buffalo 2001 - 2004
National Medical College
Skills:
Healthcare Management
Hospitals
Clinical Research
Healthcare
Medicine
Emr
Healthcare Information Technology
Patient Safety
Medical Education
Pediatrics
Critical Care
Inpatient
Board Certified

Business Records

Name / Title
Company / Classification
Phones & Addresses
Uma . Srinivasan
Srinivasan, Dr. Uma
Internist
1001 Riverside Ave, Roseville, CA 95678
(916) 784-4000

Publications

Us Patents

Sram Margin Recovery During Burn-In

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US Patent:
20180322915, Nov 8, 2018
Filed:
May 8, 2017
Appl. No.:
15/589071
Inventors:
- Armonk NY, US
Chandrasekharan Kothandaraman - New York NY, US
Adam J. McPadden - Underhill VT, US
Uma Srinivasan - Poughkeepsie NY, US
Stephen Wu - Poughkeepsie NY, US
International Classification:
G11C 11/419
G11C 29/50
G11C 29/12
Abstract:
Embodiments of the present invention provide systems and methods for re-balancing the stability of a SRAM cell. Embodiments of the present invention identify SRAM cells with negative voltage threshold margins and write a “zero” state bit with in the bi-stable flip-flop of the SRAM. Raising the voltage of the CMOS set containing the “zero” state bit and selective transistor biasing, skews the “zero” state bit towards the complementary “one” state bit. This induces an increase voltage thresholds of the identified SRAM cells.

Sram Margin Recovery During Burn-In

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US Patent:
20180322916, Nov 8, 2018
Filed:
Nov 30, 2017
Appl. No.:
15/826990
Inventors:
- Armonk NY, US
Chandrasekharan Kothandaraman - New York NY, US
Adam J. McPadden - Underhill VT, US
Uma Srinivasan - Poughkeepsie NY, US
Stephen Wu - Poughkeepsie NY, US
International Classification:
G11C 11/419
G11C 29/12
G11C 29/50
Abstract:
Embodiments of the present invention provide systems and methods for re-balancing the stability of a SRAM cell. Embodiments of the present invention identify SRAM cells with negative voltage threshold margins and write a “zero” state bit with in the bi-stable flip-flop of the SRAM. Raising the voltage of the CMOS set containing the “zero” state bit and selective transistor biasing, skews the “zero” state bit towards the complementary “one” state bit. This induces an increase voltage thresholds of the identified SRAM cells.

Sram Margin Recovery During Burn-In

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US Patent:
20180322917, Nov 8, 2018
Filed:
Feb 22, 2018
Appl. No.:
15/902065
Inventors:
- Armonk NY, US
Chandrasekharan Kothandaraman - New York NY, US
Adam J. McPadden - Underhill VT, US
Uma Srinivasan - Poughkeepsie NY, US
Stephen Wu - Poughkeepsie NY, US
International Classification:
G11C 11/419
G11C 29/12
G11C 29/50
Abstract:
Embodiments of the present invention provide systems and methods for re-balancing the stability of a SRAM cell. Embodiments of the present invention identify SRAM cells with negative voltage threshold margins and write a “zero” state bit with in the bi-stable flip-flop of the SRAM. Raising the voltage of the CMOS set containing the “zero” state bit and selective transistor biasing, skews the “zero” state bit towards the complementary “one” state bit. This induces an increase voltage thresholds of the identified SRAM cells.
Control profile
Uma Srinivansan Srinivasan from Rocklin, CA, age ~56 Get Report