Young M Park

6334229, Jan 1, 2002

Jan 7, 1999

09/227272

Mansour Moinpour - Cupertino CA
Hoang T. Nguyen - San Jose CA
Mohsen Salek - Cupertino CA
Young C. Park - Mountain View CA
Tom Bramblett - Hillsboro OR
John M. deLarios - Palo Alto CA
Lynn S. Ryle - San Jose CA
Donald E. Anderson - Morgan Hill CA
Wilbur C. Krusell - San Jose CA

Lam Research Corporation - Fremont CA

B01B 1102

15 77, 15 883, 15102, 451 44, 451245

An apparatus for cleaning edges of substrates is described. The present invention provides a cleaning mechanism that cleans particles off the edge of the wafer based on friction and/or a difference in tangential velocity at a point of contact between the wafer and the cleaning mechanism.

6357071, Mar 19, 2002

Aug 3, 1998

09/128343

Monsour Moinpour - Cupertino CA
Ilan Berman - Sunnyvale CA
Young C. Park - Mountain View CA

Intel Corporation - Santa Clara CA

B08B 700

15102, 15 77, 15 971, 15 882, 134902, 451 44, 451310

An apparatus for cleaning edges and/or bevel areas of substrates. In one embodiment, the present invention provides a cleaning mechanism that cleans particles off the edge of the wafer based upon friction at the contact point between the wafer and a rotating belt.

6475293, Nov 5, 2002

Nov 16, 2000

09/715320

Monsour Moinpour - Cupertino CA
Ilan Berman - Sunnyvale CA
Young C. Park - Mountain View CA

Intel Corporation - Santa Clara CA

B08B 700

134 6, 134902, 15 971, 15102, 451 44

An apparatus for cleaning edges and/or bevel areas of substrates. In one embodiment, the present invention provides a cleaning mechanism that cleans particles off the edge of the wafer based upon friction at the contact point between the wafer and a rotating belt.

6482696, Nov 19, 2002

Jul 10, 2001

09/901048

Young Woo Park - Los Angeles CA

Samsung Electronics Co., Ltd. - Suwon

H01L 218242

438253, 438254, 438396, 438397, 438692

A method of forming capacitor over bit line storage nodes in dynamic random access memory cell includes forming a multi-layered structure having at least two silicon oxide layers as a thick molding layer, e. g. , to a thickness of more than 8000. The at least two silicon oxide layers are disposed to have an etch speed of relatively lower-positioned silicon oxide layer to be relatively faster than that of relatively upper-positioned silicon oxide layer. Holes are then etched in the multi-layered structure, thereby reducing a width differential between the upper and lower layers.

6767439, Jul 27, 2004

Nov 7, 2001

10/045849

Young Park - Palo Alto CA, 94303

C23C 1434

20429825, 20429823, 20429835, 118719, 118729, 15634531, 15634554

The disclosure herein relates to a high throughput system for thin film deposition on substrates which can be used in applications such as optical disks, and in particular DVD disks, chip-scale packaging, and plastic based display, for example. An apparatus useful in the production of products of the kind described above includes: (a) a continuously moving web for simultaneously transporting a number of substrates to which a thin film of material is to be applied, wherein the moving web is a roll-to-roll moving web; (b) a central processing chamber which is maintained under vacuum and through which at least a portion of said continuously moving web travels; and, (c) at least one deposition device which is located within said central processing chamber, where at least a portion of said continuously moving web is exposed to material deposited from said deposition device. Typically the deposition device is a magnetron sputtering device. In addition, the apparatus typically also includes (d) a first moving platform which transfers a substrate onto said continuously moving web, and (e) a second moving platform which receives processed substrates from said continuously moving web.

7118084, Oct 10, 2006

Jun 18, 2004

10/872217

Young Chul Park - Glendale CA, US

A47B 97/04

248460, 248464

An adjustable easel having a canvas holder and a base is provided. The canvas holder is attached to the base in a way that the canvas holder can swivel with respect to the base and the canvas holder can be tilted with respect to the base. A connecting device includes a canvas holder bracket that is fixed to the canvas holder, a first shaft on which the canvas holder bracket is rotatably attached so that the canvas holder can be tilted, a second shaft on which the first shaft is fixed, and a base bracket that is fixed to the base. The base bracket is rotatably attached to the second shaft so that the canvas holder can swivel. The canvas holder includes a gripping device that grips a canvas and is adjustable to accommodate different sizes of the canvas.

7551909, Jun 23, 2009

Aug 29, 2003

10/651500

Yongsam Moon - Cupertino CA, US
Young Soo Park - Sunnyvale CA, US
Deog-Kyoon Jeong - Kwanak-Gu, KR

Silicon Image, Inc. - Sunnyvale CA

H04B 1/06

455260, 455208, 455333, 375345, 331 19

A dual current path voltage controlled oscillator exhibits both the seamless frequency acquisition and uniform VCO gain reduction while preserving an original operating range and phase locked loop characteristics. The present invention provides a quad-channel transceiver comprising a phase locked loop circuit including a voltage controlled oscillator used to generate a clock signal, a FIFO buffer used to store data to be transmitted, a frequency comparator for comparing a reference clock to the generated clock signal from the phase locked loop circuit; and a folded starved inverter circuit contained within the voltage controlled oscillator wherein the folded starved inverter provides two current paths. The dual current paths allow for simultaneous coarse and fine phase tracking. With this low jitter performance and wide operating range, the quad transceiver may be implemented in 0.

8482686, Jul 9, 2013

Feb 7, 2013

13/762276

Ming Xu - Sunnyvale CA, US
Young Bae Park - San Jose CA, US
Zhibing Ge - Sunnyvale CA, US
Daisuke Nozu - Kita, JP
Cheng Chen - San Jose CA, US
Abbas Jamshidi Roudbari - Sunnyvale CA, US
Shih Chang Chang - Cupertino CA, US
Shawn R. Gettemy - San Jose CA, US

Apple Inc. - Cupertino CA

G02F 1/141
G02F 1/133
G09G 5/00

349 37, 349 33, 349 34, 345206, 345214

Display ground plane structures may contain slits. Image pixel electrodes in the display may be arranged in rows and columns. Image pixels in the display may be controlled using gate lines that are associated with the rows and data lines that are associated with the columns. An electric field may be produced by each image pixel electrode that extends through a liquid crystal layer to an associated portion of the ground plane. The slits in the ground plane may have a slit width. Data lines may be located sufficiently below the ground plane and sufficiently out of alignment with the slits to minimize crosstalk from parasitic electric fields. A three-column inversion scheme may be used when driving data line signals into the display, so that pairs of pixels that straddle the slits are each driven with a common polarity. Gate line scanning patterns may be used that enhance display uniformity.