Yu Ting Wang

6545101, Apr 8, 2003

Feb 6, 2001

09/777398

Pawan Kumar Agarwal - Houston TX
Hsien-Chang Wang - Bellaire TX
Yu Feng Wang - Houston TX
Jean M. J. Frechet - Oakland CA
Shah A. Haque - Houston TX

ExxonMobil Chemical Patents Inc. - Houston TX

C08F 1000

5253337, 525337, 525366, 525403, 525409, 5263486, 5263487, 528372, 528402

Polyisobutylene (PIB) functionalized with terminal reactive unsaturation is disclosed. Carbocationically polymerized monohalogen-terminated PIB is dehydrohalogenated in a hydrocarbon solvent using an alkoxide of the formula RO-M wherein R is alkyl of at least 5 carbon atoms and M is alkali metal. The PIB obtained has terminal unsaturation which is 100% in the reactive âexoâ form which can be converted to succinic anhydride groups (PIB-SA) by the ene reaction with maleic anhydride. The PIB-SA is reactive with amine functional dendrimers to obtain a star-branched polymer having a dendrimer core and PIB branches joined by succinimide linkages. Blends of the star-branched polymer with polypropylene have improved energy absorption properties and controllable moisture/oxygen permeabilities useful in films.

7492005, Feb 17, 2009

Dec 28, 2005

11/321957

Hong Chang - Cupertino CA, US
Tiesheng Li - San Jose CA, US
Yu Wang - Fremont CA, US

Alpha & Omega Semiconductor, Ltd. - Hamilton

H01L 29/76

257330, 257340

This invention discloses an improved trenched metal oxide semiconductor field effect transistor (MOSFET) device that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a shielded gate trench (SGT) structure below and insulated from the trenched gate. The SGT structure is formed substantially as a round hole having a lateral expansion extended beyond the trench gate and covered by a dielectric liner layer filled with a trenched gate material. The round hole is formed by an isotropic etch at the bottom of the trenched gate and is insulated from the trenched gate by an oxide insulation layer. The round hole has a lateral expansion beyond the trench walls and the lateral expansion serves as a vertical alignment landmark for controlling the depth of the trenched gate. The MOSFET device has a reduced gate to drain capacitance Cgd depending on the controllable depth of the trenched gate disposed above the SGT structure formed as a round hole below the trenched gate.

7521332, Apr 21, 2009

Mar 23, 2007

11/690581

Tiesheng Li - San Jose CA, US
Yu Wang - Fremont CA, US
Yingying Lou - Shanghai, CN
Anup Bhalla - Santa Clara CA, US

Alpha & Omega Semiconductor, Ltd - Hamilton

H01L 21/76

438426

A method for determining the depth etch, a method of forming a shielded gate trench (SGT) structure and a semiconductor device wafer are disclosed. A material layer is formed over part of a substrate having a trench. The material fills the trench. A resist mask is placed over a test portion of the material layer thereby defining a test structure that lies underneath the resist mask. The resist mask does not cover the trench. The material is isotropically etched and a signal related to a resistance change of the test structure is measured. A lateral undercut Dof the test structure is determined from the signal and an etch depth Dis determined from D. The wafer may comprise one or more test structures forming a bridge circuit; one or more metal contacts that electrically connect the test structures through contact holes: and resist layer including over the test structures.

7632733, Dec 15, 2009

Apr 29, 2006

11/413248

Yu Wang - Fremont CA, US
Tiesheng Li - San Jose CA, US
Hong Chang - Cupertino CA, US

Alpha & Omega Semiconductor, Inc. - Sunnyvale CA

H01L 21/336

438270, 257E2153

This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.

7633267, Dec 15, 2009

Jul 5, 2005

11/175555

Keith Douglas Kepler - Belmont CA, US
Yu Wang - Foster City CA, US

Farasis Energy, Inc. - Hayward CA

H01M 10/46

320150

A high throughput combinatorial screening method and apparatus for the evaluation of electrochemical materials using a single voltage source () is disclosed wherein temperature changes arising from the application of an electrical load to a cell array () are used to evaluate the relative electrochemical efficiency of the materials comprising the array. The apparatus may include an array of electrochemical cells () that are connected to each other in parallel or in series, an electronic load () for applying a voltage or current to the electrochemical cells (), and a device (), external to the cells, for monitoring the relative temperature of each cell when the load is applied.

7710371, May 4, 2010

Dec 16, 2004

11/014490

Ping Mei - Palo Alto CA, US
Jurgen Daniel - Mountain View CA, US
James B. Boyce - Los Altos CA, US
Jackson Ho - Palo Alto CA, US
Rachel Lau - San Jose CA, US
Yu Wang - Union City CA, US

Xerox Corporation - Norwalk CT

G09G 3/34
C25B 9/00
F04B 17/00
B41J 2/14
G02F 1/153
H04R 19/00

345 85, 204253, 204255, 204257, 204252, 4174131, 347 49, 359267, 359291, 381176, 381399

Cells can include variable volumes defined between a flexible structure, such as a polymer layer, and a support surface, with the flexible structure and support surface being attached in a first region that surrounds a second region in which they are unattached. Various adhesion structures can attach the flexible structure and the support surface. When unstretched, the flexible structure can lie in a flat position on the support surface. In response to a stretching force away from the support surface, the flexible structure can move out of the flat position, providing the variable volume. Electrodes, such as on the flexible structure, on the support surface, and over the flexible structure, can have charge levels that couple with each other and with the variable volume. A support structure can include a device layer with signal circuitry that provides a signal path between an electrode and external circuitry. One or more ducts can provide fluid communication with each cell's variable volume.

7795108, Sep 14, 2010

Mar 6, 2009

12/399632

Tiesheng Li - San Jose CA, US
Yu Wang - Fremont CA, US
Yingying Lou - Shanghai CA, US
Anup Bhalla - Santa Clara CA, US

Alpha & Omega Semiconductor, Ltd - Hamilton

H01L 21/76

438426

A method for determining the depth etch, a method of forming a shielded gate trench (SGT) structure and a semiconductor device wafer are disclosed. A material layer is formed over part of a substrate having a trench. The material fills the trench. A resist mask is placed over a test portion of the material layer thereby defining a test structure that lies underneath the resist mask. The resist mask does not cover the trench. The material is isotropically etched and a signal related to a resistance change of the test structure is measured. A lateral undercut Dof the test structure is determined from the signal and an etch depth Dis determined from D. The wafer may comprise one or more test structures forming a bridge circuit; one or more metal contacts that electrically connect the test structures through contact holes: and resist layer including over the test structures.

7858735, Dec 28, 2010

May 29, 2009

12/475034

Richard C. Yeh - Bellaire TX, US
Yu Feng Wang - Houston TX, US
Jean-Paul Swoboda - Grandcamp, FR

ExxonMobil Chemical Patents Inc. - Houston TX

C08F 6/00
C08J 3/00

528481, 523334, 523335, 524495

In the production of elastomers the product obtained from the polymerization process is often in the form of a slurry. Described herein are an apparatus and a process for “finishing” the elastomer, i. e. , dewatering and drying the elastomer. The process comprises the steps of obtaining a slurry comprising water and elastomer; passing the slurry through a first dewatering device to produce a wet elastomer crumb, wherein the first dewatering device comprises two dewatering extruders in parallel; passing the wet elastomer crumb through a second dewatering device; and then passing the wet elastomer crumb through a drying device to produce a dried elastomer crumb.