Armen P Avoyan

6919689, Jul 19, 2005

Nov 24, 2003

10/721439

Armen Avoyan - Glendale CA, US

LAM Research Corporation - Fremont CA

H01J007/24
G01R031/08
C23C014/00

31511171, 31511121, 324519, 118 501

A plasma processing system having a grounded chamber and an RF power feed connected to a bottom electrode is tested. A first capacitance between the bottom electrode and the grounded chamber is measured at atmosphere. Consumable hardware parts are installed in the chamber. A second capacitance between the bottom electrode and the grounded chamber is measured at vacuum with the grounded chamber including all of the installed consumable hardware parts. The first capacitance measurement and the second capacitance measurement are respectively compared with a first reference value and a second reference value to identify and determine any defects in the plasma processing system. The first and second reference value respectively are representative of the capacitance of a defect-free chamber at atmosphere and the capacitance of a defect-free chamber including all of the installed consumable hardware parts at vacuum.

7578889, Aug 25, 2009

Mar 30, 2007

11/730300

Hong Shih - Walnut CA, US
Yaobo Yin - Pleasanton CA, US
Shun Jackson Wu - Cupertino CA, US
Armen Avoyan - Glendale CA, US
John E. Daugherty - Newark CA, US
Linda Jiang - Milpitas CA, US

Lam Research Corporation - Fremont CA

B08B 3/04

134 26, 427488, 427489, 427490, 427491, 427523, 427524, 427525, 427526, 427527, 427528, 427529, 427530, 427531, 427533, 427534, 427535, 427536, 427537, 427538, 427539, 427562, 427563, 427564, 427569, 427570, 427571, 427572, 427573, 427574, 427575, 427576, 427577, 427578, 427579, 216 52, 216 53, 216 67, 216 83, 216 84, 216 96, 216 99, 216100, 216101, 216102, 216103, 216104, 216105, 216106, 216107, 216108, 216109, 134 1, 134 2, 134 3, 134 28, 134 34, 134 36, 134 41, 134 42, 1341041, 134150, 134166 R, 134170

Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

8022718, Sep 20, 2011

Feb 25, 2009

12/392498

Armen Avoyan - Glendale CA, US
Hong Shih - Walnut CA, US
John Daugherty - Fremont CA, US

Lam Research Corporation - Fremont CA

G01R 31/20

32475405, 32475421, 32475419, 382154, 356 12

A method of inspecting an electrostatic chuck (ESC) is provided. The ESC has a dielectric support surface for a semiconductor wafer. The dielectric support surface is scanned with a Kelvin probe to obtain a surface potential map. The surface potential map is compared with a reference Kelvin probe surface potential map to determine if the ESC passes inspection.

8075701, Dec 13, 2011

Jun 30, 2008

12/164294

Armen Avoyan - Glendale CA, US
Yan Fang - Fremont CA, US
Duane Outka - Fremont CA, US
Hong Shih - Walnut CA, US
Stephen Whitten - Danville CA, US

Lam Research Corporation - Fremont CA

C23G 1/00
B08B 3/00
H01L 21/00

134 26, 134 2, 134 3, 438 4

A process for reconditioning a multi-component electrode comprising a silicon electrode bonded to an electrically conductive backing plate is provided. The process comprises: (i) removing metal ions from the multi-component electrode by soaking the multi-component electrode in a substantially alcohol-free DSP solution comprising sulfuric acid, hydrogen peroxide, and water and rinsing the multi-component electrode with de-ionized water; (ii) polishing one or more surfaces of the multi-component electrode following removal of metal ions there from; and (iii) removing contaminants from silicon surfaces of the multi-component electrode by treating the polished multi-component electrode with a mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water and by rinsing the treated multi-component electrode with de-ionized water. Additional embodiments of broader and narrower scope are contemplated.

8075703, Dec 13, 2011

Dec 10, 2009

12/635167

Armen Avoyan - Glendale CA, US
Duane Outka - Fremont CA, US
Catherine Zhou - Fremont CA, US
Hong Shih - Walnut CA, US

Lam Research Corporation - Fremont CA

B08B 3/12
B08B 3/08
B08B 3/04

134 28, 134 13, 134 26, 134 29

A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both. Additional embodiments are contemplated, disclosed, and claimed.

8171877, May 8, 2012

Jun 30, 2008

12/164285

Jason Augustino - Fremont CA, US
Armen Avoyan - Glendale CA, US
Yan Fang - Fremont CA, US
Duane Outka - Fremont CA, US
Hong Shih - Walnut CA, US
Stephen Whitten - Danville CA, US

Lam Research Corporation - Fremont CA

B05C 13/00
B05C 13/02
B05C 21/00
C23C 16/00
C23C 16/50
C23F 1/00
H01L 21/306

118503, 118723 E, 118723 R, 118715, 118500, 1563451, 15634534

A carrier assembly is provided comprising a backside mounted electrode carrier and electrode mounting hardware. The backside mounted electrode carrier comprises an electrode accommodating aperture, which in turn comprises a sidewall structure that is configured to limit lateral movement of an electrode positioned in the aperture. The electrode accommodating aperture further comprises one or more sidewall projections that support the weight of an electrode positioned in the aperture. The electrode mounting hardware is configured to engage an electrode positioned in the electrode accommodating aperture from the backside of the carrier and urge the electrode against the sidewall projections so as to limit axial movement of the electrode in the electrode accommodating aperture. Additional embodiments of broader and narrower scope are contemplated.

8221552, Jul 17, 2012

Mar 30, 2007

11/730296

Duane Outka - Fremont CA, US
Jason Augustino - Fremont CA, US
Armen Avoyan - Glendale CA, US
Stephen Whitten - Danville CA, US
Hong Shih - Walnut CA, US
Yan Fang - Fremont CA, US

Lam Research Corporation - Fremont CA

B08B 17/02
B08B 3/04
B08B 5/02
B08B 1/04

134 3, 134 6, 134 21, 134 26, 134 28, 134 30

Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member.

8276604, Oct 2, 2012

Jun 30, 2008

12/164288

Jason Augustino - Fremont CA, US
Armen Avoyan - Glendale CA, US
Yan Fang - Fremont CA, US
Duane Outka - Fremont CA, US
Hong Shih - Walnut CA, US
Stephen Whitten - Danville CA, US

Lam Research Corporation - Fremont CA

H05H 1/34
H01J 37/02
H01J 37/32
H01L 21/00
C23C 16/00

134137, 134 59, 134 85, 134166 R, 1563451, 15634514, 15634523, 15634551, 15634547, 118723 E

In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated.