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Arsam K Antreasyan

from Hopewell Junction, NY
Age ~69
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Also known as:
Ani K Antreasyan, Ars Antreasyan, Ami Antreasyan, Ara Antreasyan, Antreasyan Arsam, Arsam N, Ani N
Related to:
Oskian Kouzouian, 62Aren Antreasyan, 26Vartouhi Kouzouian
Connected to:
Antesha Antreas, 28Hrair H Antreas, 27Hilton Antrell, 43Helen R Antrez, 71Kristyna R Antrican, 46Lisa M Antrican, 42Christine A Antrilli, 61Beth E Antrim, 66Dan A Antrim, 63Dane T Antrim, 38

Arsam Antreasyan Phones & Addresses

  • Hopewell Junction, NY
  • Fanwood, NJ
  • Princeville, HI
  • Kailua Kona, HI
  • Ocean View, HI
  • Hawi, HI
  • 37 Saint Andrews Ln, Hopewell Junction, NY 12533

Work

Company: Cmit solutions of greater poughkeepsie and greater danbury Sep 1, 2009 Position: Owner

Education

Degree: Doctorates, Doctor of Philosophy School / High School: University of California, Berkeley 1979 to 1984 Specialities: Electrical Engineering

Skills

Management • Cloud Computing • Project Management • Leadership • Servers • Product Development • Enterprise Software • Hardware • Information Technology • Entrepreneurship • Business Development • Integration • Networking • Testing • Disaster Recovery • Customer Service • Strategy • Program Management • Saas • Training • Computer Hardware • Semiconductors • German • English • Itil • Wireless • Help Desk Support • Business Strategy • Social Networking • Software As A Service • Technical Support

Industries

Higher Education

Resumes

Resumes

Arsam Antreasyan Photo 1

Adjunct Professor

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Location:
37 Saint Andrews Ln, Hopewell Junction, NY 12533
Industry:
Higher Education
Work:
Cmit Solutions of Greater Poughkeepsie and Greater Danbury
Owner
Iona College
Adjunct Professor
Ibm Jul 1989 - Jul 2009
Project Manager
Ibm Jan 1989 - Apr 2009
Advisory Project Manager
Ibm Jan 1992 - Jan 2005
Characterization Engineer
Education:
University of California, Berkeley 1979 - 1984
Doctorates, Doctor of Philosophy, Electrical Engineering Karlsruhe Institute of Technology (Kit) 1974 - 1979
University of California, Berkeley
Master of Science, Masters, Electrical Engineering
Skills:
Management
Cloud Computing
Project Management
Leadership
Servers
Product Development
Enterprise Software
Hardware
Information Technology
Entrepreneurship
Business Development
Integration
Networking
Testing
Disaster Recovery
Customer Service
Strategy
Program Management
Saas
Training
Computer Hardware
Semiconductors
German
English
Itil
Wireless
Help Desk Support
Business Strategy
Social Networking
Software As A Service
Technical Support

Business Records

Name / Title
Company / Classification
Phones & Addresses
Arsam Antreasyan
President
AREN ENTERPRISES LLC
37 Saint Andrews Ln, Hopewell Junction, NY 12533
37 St Andrews Ln, Hopewell Junction, NY 12533

Publications

Us Patents

Group Iii-V Compound Field Effect Transistor With Diffusion Barrier

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US Patent:
48735582, Oct 10, 1989
Filed:
Feb 23, 1988
Appl. No.:
7/159156
Inventors:
Arsam Antreasyan - Fanwood NJ
Paul A. Garbinski - New Providence NJ
Vincent D. Mattera - Flemington NJ
Henryk Temkin - Berkeley Heights NJ
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 2978
H01L 29201
H01L 2946
US Classification:
357 232
Abstract:
Group III-V compound MISFETs include a low-doped diffusion barrier layer disposed between a source/drain contact-facilitating layer and the channel layer.

Ridge Waveguide Semiconductor Laser With Thin Active Region

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US Patent:
53094654, May 3, 1994
Filed:
Nov 5, 1992
Appl. No.:
7/972049
Inventors:
Arsam Antreasyan - Hopewell Junction NY
Greg Costrini - Austin TX
Peter D. Hoh - Hopewell Junction NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01S 318
US Classification:
372 43
Abstract:
The present invention provides an improved semiconductor ridge waveguide laser structure having a plurality of layers including an N-InP buffer layer and an N-type InP substrate, a thin InGaAsP active layer 1100 Angstroms thickness, a P-InP graded layer, an optional etch stop layer, a P-InP cladding layer and a P+InGaAs. The ridge waveguide laser of the present invention demonstrates a very high reliability and the fabrication process therefor is high yield. The ridge waveguide laser of the present invention demonstrates very good high temperature behavior and the design suppresses higher order modes.

Waveguide Ridge Laser Device With Improved Mounting And Ridge Protection

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US Patent:
53053400, Apr 19, 1994
Filed:
Dec 16, 1992
Appl. No.:
7/991009
Inventors:
Arsam Antreasyan - Hopewell Junction NY
Myra N. Boenke - Hopewell Junction NY
Greg Costrini - Austin TX
Kurt R. Grebe - Beacon NY
Christoph Harder - Zurich, CH
Peter D. Hoh - Hopewell Junction NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01S 318
US Classification:
372 43
Abstract:
A protection configuration for a semiconductor ridge waveguide laser structure is disclosed wherein layers of protective metal in the form of walls, is applied on each side of the ridge element of the ridged layer of the laser structure. The laser structure is then bonded to a mounting plate in a junction side down orientation by solder or a junction side up orientation by wire bonding. The metal layer may be composed of gold.
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Arsam K Antreasyan from Hopewell Junction, NY, age ~69 Get Report