Resumes
Resumes
Bed Sharma Phones & Addresses
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1537 E Goldcrest St, Gilbert, AZ 85297 (940) 390-8630
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Tempe, AZ
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Denton, TX
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Carbondale, IL
Publications
Us Patents
Methods For Selectively Forming A Silicon Nitride Film On A Substrate And Related Semiconductor Device Structures
View pageUS Patent:
20200294789, Sep 17, 2020
Filed:
May 27, 2020
Appl. No.:
16/885098
Inventors:
- Almere, NL
Bed Sharma - Gilbert AZ, US
Bed Sharma - Gilbert AZ, US
International Classification:
H01L 21/02
H01L 21/768
C23C 16/34
C23C 16/455
C23C 16/56
C23C 16/04
H01L 21/768
C23C 16/34
C23C 16/455
C23C 16/56
C23C 16/04
Abstract:
A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.
Structure Including Siocn Layer And Method Of Forming Same
View pageUS Patent:
20200283893, Sep 10, 2020
Filed:
Feb 27, 2020
Appl. No.:
16/802920
Inventors:
- Almere, NL
Bed Prasad Sharma - Gilbert AZ, US
Shankar Swaminathan - Phoenix AZ, US
Eric James Shero - Phoenix AZ, US
Bed Prasad Sharma - Gilbert AZ, US
Shankar Swaminathan - Phoenix AZ, US
Eric James Shero - Phoenix AZ, US
International Classification:
C23C 16/36
C23C 16/455
C23C 16/455
Abstract:
A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.
Method For Selective Deposition Of Silicon Nitride Layer And Structure Including Selectively-Deposited Silicon Nitride Layer
View pageUS Patent:
20200286726, Sep 10, 2020
Filed:
Feb 26, 2020
Appl. No.:
16/801910
Inventors:
- Almere, NL
Paul Ma - Scottsdale AZ, US
Bed Prasad Sharma - Gilbert AZ, US
Shankar Swaminathan - Phoenix AZ, US
Paul Ma - Scottsdale AZ, US
Bed Prasad Sharma - Gilbert AZ, US
Shankar Swaminathan - Phoenix AZ, US
International Classification:
H01L 21/02
H01J 37/32
H01L 21/768
H01L 21/687
C23C 16/455
C23C 16/34
H01J 37/32
H01L 21/768
H01L 21/687
C23C 16/455
C23C 16/34
Abstract:
A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.
Methods For Selectively Forming A Silicon Nitride Film On A Substrate And Related Semiconductor Device Structures
View pageUS Patent:
20180323055, Nov 8, 2018
Filed:
May 8, 2017
Appl. No.:
15/589849
Inventors:
- Almere, NL
Bed Sharma - Gilbert AZ, US
Bed Sharma - Gilbert AZ, US
International Classification:
H01L 21/02
H01L 21/311
H01L 21/768
C23C 16/34
C23C 16/455
C23C 16/56
H01L 21/311
H01L 21/768
C23C 16/34
C23C 16/455
C23C 16/56
Abstract:
A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.
Methods For Forming A Silicon Nitride Film On A Substrate And Related Semiconductor Device Structures
View pageUS Patent:
20180323056, Nov 8, 2018
Filed:
May 8, 2017
Appl. No.:
15/589861
Inventors:
- Almere, NL
Bed Sharma - Gilbert AZ, US
Eric James Shero - Phoenix AZ, US
Bed Sharma - Gilbert AZ, US
Eric James Shero - Phoenix AZ, US
International Classification:
H01L 21/02
H01L 21/033
C23C 16/455
C23C 16/34
H01L 21/033
C23C 16/455
C23C 16/34
Abstract:
A method for forming a silicon nitride film on a substrate is disclosed. The method may include; forming a cyclical silicon nitride film on the substrate by a cyclical deposition process, wherein the cyclical deposition process comprises at least one of; contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source. The method may also include exposing the cyclical silicon nitride film to a plasma. Semiconductor device structures comprising a silicon nitride film are also disclosed.
Selective Formation Of Metal Silicides
View pageUS Patent:
20170259298, Sep 14, 2017
Filed:
Mar 8, 2016
Appl. No.:
15/064404
Inventors:
- Almere, NL
Michael Eugene Givens - Phoenix AZ, US
Bed Sharma - Gilbert AZ, US
Petri Räisänen - Gilbert AZ, US
Michael Eugene Givens - Phoenix AZ, US
Bed Sharma - Gilbert AZ, US
Petri Räisänen - Gilbert AZ, US
International Classification:
B05D 1/00
Abstract:
Processes are provided for selectively depositing a metal silicide material on a first H-terminated surface of a substrate relative to a second, different surface of the same substrate. In some aspects, methods of forming a metal silicide contact layer for use in integrated circuit fabrication are provided.