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Bennett Langsdorf Phones & Addresses

  • Clinton, NY
  • 208 Graywick Way, Cary, NC 27513 (541) 908-1816
  • Wake Forest, NC
  • 3509 Mckinley Dr, Corvallis, OR 97330 (541) 752-3258
  • Eugene, OR
  • Forest Grove, OR
  • Portland, OR

Publications

Us Patents

High Voltage Monolithic Led Chip

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US Patent:
20140070245, Mar 13, 2014
Filed:
Oct 9, 2013
Appl. No.:
14/050001
Inventors:
MATTHEW DONOFRIO - RALEIGH NC, US
BENNETT LANGSDORF - CARY NC, US
THOMAS PLACE - FRANKLINTON NC, US
MICHAEL JOHN BERGMANN - RALEIGH NC, US
Assignee:
CREE, INC. - DURHAM NC
International Classification:
H01L 33/08
US Classification:
257 93, 257 88, 257 99
Abstract:
Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

High Voltage Monolithic Led Chip

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US Patent:
20210020805, Jan 21, 2021
Filed:
Oct 2, 2020
Appl. No.:
17/062119
Inventors:
- Durham NC, US
Matthew Donofrio - Raleigh NC, US
Bennett Langsdorf - Cary NC, US
Thomas Place - Franklinton NC, US
Michael John Bergmann - Raleigh NC, US
International Classification:
H01L 33/08
H01L 33/40
H01L 25/075
Abstract:
Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

High Voltage Monolithic Led Chip With Improved Reliability

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US Patent:
20200365782, Nov 19, 2020
Filed:
Jul 31, 2020
Appl. No.:
16/944356
Inventors:
- Durham NC, US
Kevin W. Haberern - Cary NC, US
Bennett D. Langsdorf - Cary NC, US
Manuel L. Breva - Morrisville NC, US
International Classification:
H01L 33/60
H01L 25/075
H01L 33/62
H01L 33/46
H01L 33/40
H01L 33/38
H01L 33/08
H01L 27/15
Abstract:
Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.

High Voltage Monolithic Led Chip With Improved Reliability

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US Patent:
20190198734, Jun 27, 2019
Filed:
Mar 1, 2019
Appl. No.:
16/290084
Inventors:
- Durham NC, US
KEVIN W. HABERERN - CARY NC, US
BENNETT D. LANGSDORF - CARY NC, US
MANUEL L. BREVA - MORRISVILLE NC, US
International Classification:
H01L 33/60
H01L 25/075
H01L 33/40
H01L 33/46
H01L 33/62
H01L 27/15
H01L 33/08
H01L 33/38
Abstract:
Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.

High Voltage Monolithic Led Chip

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US Patent:
20190074407, Mar 7, 2019
Filed:
Oct 29, 2018
Appl. No.:
16/173617
Inventors:
- Durham NC, US
Matthew Donofrio - Raleigh NC, US
Bennett Langsdorf - Cary NC, US
Thomas Place - Franklinton NC, US
Michael John Bergmann - Raleigh NC, US
International Classification:
H01L 33/08
H01L 33/40
H01L 25/075
Abstract:
Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

High Voltage Monolithic Led Chip

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US Patent:
20170309778, Oct 26, 2017
Filed:
Jul 12, 2017
Appl. No.:
15/647823
Inventors:
- Durham NC, US
Matthew Donofrio - Raleigh NC, US
Bennett Langsdorf - Cary NC, US
Thomas Place - Franklinton NC, US
Michael John Bergmann - Raleigh NC, US
International Classification:
H01L 33/08
H01L 25/075
H01L 33/40
H01L 33/46
Abstract:
Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

High Voltage Monolithic Led Chip With Improved Reliability

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US Patent:
20150249196, Sep 3, 2015
Filed:
Apr 29, 2015
Appl. No.:
14/699302
Inventors:
- Durham NC, US
Kevin W. Haberern - Cary NC, US
Bennett D. Langsdorf - Cary NC, US
Manuel L. Breva - Morrisville NC, US
International Classification:
H01L 33/62
H01L 33/08
H01L 33/48
H01L 33/60
Abstract:
Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.

Phosphor-Converted Light Emitting Device

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US Patent:
20150069430, Mar 12, 2015
Filed:
May 14, 2014
Appl. No.:
14/120297
Inventors:
- Durham NC, US
Matthew Donofrio - Raleigh NC, US
Kevin W. Haberern - Cary NC, US
Bennett Langsdorf - Cary NC, US
Anoop Mathew - Raleigh NC, US
Harry A. Seibel - Morrisville NC, US
Iliya Todorov - Durham NC, US
Bradley E. Williams - Cary NC, US
International Classification:
H01L 33/50
H01L 27/15
US Classification:
257 89
Abstract:
A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.
Bennett D Langsdorf from Clinton, NY, age ~49 Get Report