David A Kurtz from 3972 Tippery Rd, Barree, PA 16611, age 58, Phone: (814) 669-4911

Professional Records

Lawyers & Attorneys

David Kurtz - Lawyer

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Office:

Constangy, Brooks, Smith & Prophete, LLP

Specialties:

Labor Relations
Litigation
Employment Litigation Prevention and Defense
Wage and Hour Compliance and Litigation

ISLN:

913380879

Admitted:

1998

University:

University of Virginia, B.A., 1995

Law School:

Boston College Law School, J.D.; Boston College Law School, J.D.; Boston College Law School, J.D.

David Kurtz - Lawyer

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Specialties:

Discovery Solutions
Workers' Compensation Law
Social Security Lawyers

ISLN:

905701583

Admitted:

1978

University:

Kalamazoo College, A.B., 1975

Law School:

University of Detroit Mercy, J.D., 1978

David Kurtz - Lawyer

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Specialties:

Criminal
Criminal Defense

ISLN:

905701613

Admitted:

1978

University:

University of Wisconsin-Madison, B.A., 1974

Law School:

University of Washington, J.D., 1978

David Kurtz - Lawyer

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Office:

Law Office of David R. Kurtz

Specialties:

Estate Planning
Probate
Trusts & Estates
Criminal Defense
DUI & DWI
Trusts
Wills & Living Wills
Criminal Defense

ISLN:

905701576

Admitted:

1976

University:

Purdue University, B.A., 1960

Law School:

La Verne College of Law, University of Sepulveda, formerly University of San Fernando Valley, J.D., 1976

License Records

David Kurtz

License #:

57.89.1722-A - Active

Expiration Date:

Jul 8, 2017

Type:

Fireworks - Exhibitor Assistant

David Irwin Kurtz

License #:

MT012581T - Expired

Category:

Medicine

Type:

Graduate Medical Trainee

Medicine Doctors

David I. Kurtz

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Specialties:

Colon & Rectal Surgery, General Surgery

Work:

David I Kurtz MD
1411 N Flagler Dr STE 9400, West Palm Beach, FL 33401
(561) 659-7702 (phone), (561) 659-7821 (fax)

Education:

Medical School
Temple University School of Medicine
Graduated: 1984

Procedures:

Appendectomy
Bariatric Surgery
Endoscopic Retrograde Cholangiopancreatography (ERCP)
Gallbladder Removal
Hemorrhoid Procedures
Sigmoidoscopy
Small Bowel Resection
Spleen Surgey
Colonoscopy
Destruction of Lesions on the Anus
Hernia Repair
Laparoscopic Appendectomy
Laparoscopic Gallbladder Removal
Oophorectomy
Pilonidal Cyst Excision
Proctosigmoidoscopy
Thoracoscopy
Tracheostomy
Upper Gastrointestinal Endoscopy

Conditions:

Cholelethiasis or Cholecystitis
Gastrointestinal Hemorrhage
Hemorrhoids
Inguinal Hernia
Intestinal Obstruction

Languages:

English

Description:

Dr. Kurtz graduated from the Temple University School of Medicine in 1984. He works in West Palm Beach, FL and specializes in Colon & Rectal Surgery and General Surgery. Dr. Kurtz is affiliated with Good Samaritan Medical Center and St Marys Medical Center.

David Irwin Kurtz

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Specialties:

Surgery
Colon & Rectal Surgery

Education:

Temple University Physicians (1984) Surgery

Business Records

Name / Title

Company / Classification

Phones & Addresses

Mr. David Kurtz
President

Kurtz & Company, PC
Tax Return Preparation

12801 North Central Expressway, Suite 1150, Dallas, TX 75243
(972) 386-7300, (972) 386-0811

David Kurtz
Director

Word Fellowship Church of Northeast San Antonio

David Kurtz

KPM LAWN AND LANDSCAPING LLC

David Kurtz

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OUTSTANDING ACHIEVEMENT IN MUSIC DIRECTION AND COMPOSITION FOR A DRAMA SERIESThe Bold and the Beautiful CBSBradley Bell, Jack Allocco, David Kurtz, Music Directors, Composers Lothar Struff, Music Supervisor

Date

Jun 15, 2013

Source:

Google

New Hampshire's 'knockout' GOP debate: Winners and losers

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id Weigel atSlate. In debate after debate, "he lacks an opponent who can take apart his health care record in Massachusetts" his biggest potential vulnerability. And until someone else steps up, says David Kurtz at Talking Points Memo, "it's Mitt Romney and the also-rans. It's that simple."

Date

Oct 12, 2011

Category:

U.S.

Source:

Google

Publications

Us Patents

Method And Apparatus For Quantitative Phase Analysis Of Textured Polycrystalline Materials

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US Patent:

6678347, Jan 13, 2004

Filed:

Jul 26, 2002

Appl. No.:

10/205717

Inventors:

Krzysztof J. Kozaczek - State College PA
David S. Kurtz - State College PA
Paul R. Moran - Port Matilda PA
Roger I. Martin - State College PA

Assignee:

HyperNex, Inc. - State College PA

International Classification:

G01N 23207

US Classification:

378 75, 378 74

Abstract:

A method for quantitatively determining the phase composition of a sample mixture that comprises two or more textured polycrystalline materials, based on corrected and integrated x-ray diffraction intensities. The effect of texture has been analytically eliminated from such corrected and integrated x-ray diffraction intensities, based on the texture information obtained from the sample mixture.

Method And Apparatus For Thin Film Thickness Mapping

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US Patent:

6792075, Sep 14, 2004

Filed:

Aug 21, 2002

Appl. No.:

10/225534

Inventors:

Krzysztof J. Kozaczek - State College PA
David S. Kurtz - State College PA
Paul R. Moran - Port Matilda PA
Roger I. Martin - State College PA
Patrick W. Dehaven - Poughkeepsie NY
Kenneth P. Rodbell - Sandy Hook CT
Sandra G. Malhotra - Beacon NY

Assignee:

HyperNex, Inc. - State College PA

International Classification:

G01N 2320

US Classification:

378 71, 378 73, 378 50

Abstract:

An apparatus and method for mapping film thickness of one or more textured polycrystalline thin films. Multiple sample films of known thickness are provided. Each sample film is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i. e. , pole densities) of the sample film, is calculated based on incomplete pole figures collected on the diffraction image and used to correct the x-ray diffraction intensities from such sample. The corrected diffraction intensities are integrated for each sample film, and then used for constructing a calibration curve that correlates diffraction intensities with respective known film thickness of the sample films. The film thickness of a textured polycrystalline thin film of unknown thickness can therefore be mapped on such calibration curve, using a corrected and integrated diffraction intensity obtained for such thin film of unknown thickness.

Method And Apparatus For Rapid Grain Size Analysis Of Polycrystalline Materials

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US Patent:

6882739, Apr 19, 2005

Filed:

Jun 19, 2001

Appl. No.:

09/884791

Inventors:

David S. Kurtz - State College PA, US
Kryzsztof J. Kozaczek - State College PA, US
Paul R. Moran - Port Matilda PA, US

Assignee:

HyperNex, Inc. - State College PA

International Classification:

G06K009/00

US Classification:

382109, 356 30, 356335, 356336, 378 70, 378 71, 378 73, 378 81

Abstract:

An apparatus and method for performing rapid grain size analysis on a textured polycrystalline material, by generating average grain size and grain size distribution data from x-ray diffraction data of such material. Raw diffraction data is obtained by capturing a plurality of diffraction arcs within a single data capture frame. The raw diffraction data is digitally registered; () and the registered diffraction data is filtered to remove background noise, exclude diffraction overlaps or truncations, and compensate for biased data obtained from regions of highly preferred orientations. Average grain size and grain size distribution data are then correlated with the filtered diffraction data. The apparatus for acquiring raw diffraction data includes a collimated x-ray source having means for adjusting beam size and divergence of the x-ray generated, a 2-dimensional area detector for registering diffracted x-ray, and a sample motion assembly for moving the sample in the sample plane. The resulting system is fast, accurate, amenable to automation, and does not require highly skilled personnel to operate.

Method And Apparatus For Thin Film Thickness Mapping

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US Patent:

6909772, Jun 21, 2005

Filed:

Dec 23, 2003

Appl. No.:

10/744413

Inventors:

Krzysztof J. Kozaczek - State College PA, US
David S. Kurtz - State College PA, US
Paul R. Moran - Port Matilda PA, US
Roger I. Martin - State College PA, US
Patrick W. Dehaven - Poughkeepsie NY, US
Kenneth P. Rodbell - Sandy Hook CT, US
Sandra G. Malhotra - Beacon NY, US

Assignee:

HyperNex, Inc. - State College PA
International Business Machines Corp. - Hopewell Junction NY

International Classification:

G01N023/20

US Classification:

378 71, 378 50, 378 89

Abstract:

An apparatus and method for mapping film thickness of textured polycrystalline thin films. Multiple sample films of known thicknesses are provided, and each is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i. e. , pole densities) of each sample film is calculated based on multiple incomplete pole figures collected from the diffraction image and used to correct the x-ray diffraction intensities obtained from such sample film. Corrected and integrated diffraction intensities of the sample films are then correlated to respective known film thicknesses of such films, and the correlation so determined can be used to map the film thickness of a textured polycrystalline thin film of unknown thickness, based on the corrected and integrated diffraction intensity calculated for such thin film.

Large Angle Solid State Position Sensitive X-Ray Detector System

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US Patent:

57244014, Mar 3, 1998

Filed:

Jan 24, 1996

Appl. No.:

8/590956

Inventors:

David S. Kurtz - State College PA
Clay O. Ruud - State College PA

Assignee:

The Penn State Research Foundation - University Park PA
Advanced Technology Materials, Inc. - Danbury CT

International Classification:

G01N 2320

US Classification:

378171

Abstract:

A method and apparatus for x-ray measurement of certain properties of a solid material. In distinction to known methods and apparatus, this invention employs a specific fiber-optic bundle configuration, termed a reorganizer, itself known for other uses, for coherently transmitting visible light originating from the scintillation of diffracted x-radiation from the solid material gathered along a substantially one dimensional linear arc, to a two-dimensional photo-sensor array. The two-dimensional photodetector array, with its many closely packed light sensitive pixels, is employed to process the information contained in the diffracted radiation and present the information in the form of a conventional x-ray diffraction spectrum. By this arrangement, the angular range of the combined detector faces may be increased without loss of angular resolution. Further, the prohibitively expensive coupling together of a large number of individual linear diode photodetectors, which would be required to process signals generated by the diffracted radiation, is avoided.

Apparatus For Rapid In-Situ X-Ray Stress Measurement During Thermal Cycling Of Semiconductor Wafers

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US Patent:

58481222, Dec 8, 1998

Filed:

Mar 25, 1997

Appl. No.:

8/823967

Inventors:

David S. Kurtz - State College PA

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

G01N 2320

US Classification:

378 80

Abstract:

An apparatus for making rapid in-situ thermal stress measurements includes a controlled atmosphere test chamber for receiving and holding a test sample, and a heating zone within the test chamber confined to the near vicinity of the test sample. A test sample holder, a test sample heater, an x-y translation stage and a rotating stage are mounted within the test chamber. An X-ray source is positioned for producing an incident X-ray beam directed at the test sample from different inclination angles. The incident X-ray beam passes through a long but narrow X-ray window in the test chamber, diffracts from the test sample back through the same X-ray window and continues outside of the chamber to an X-ray detector. The diffracted X-ray beam is converted to light. The light is transmitted through optical fibers and is detected by a CCD array.

Photo-Sensor Fiber-Optic Stress Analysis System

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US Patent:

60581603, May 2, 2000

Filed:

Sep 1, 1998

Appl. No.:

9/144932

Inventors:

David S. Kurtz - State College PA

Assignee:

Hypernex, Inc. - State College PA

International Classification:

G01N 2304

US Classification:

378 70

Abstract:

An x-ray diffraction system for determining stress in integrated circuit materials includes a source of x-rays (3) that are directed toward a sample holding mechanism for diffracting from the test sample (8). An x-ray detector (14) is arranged for detecting high back reflected diffracted x-ray intensity data representing stress in the test sample. A two-dimensional detection and storage arrangement (24) is arranged for detecting and storing the data representing stress in the test sample. A data processor (2) accesses the stored data from the two-dimensional detection and storage arrangement and processes the data representing stress in the test sample to determine stress in the test sample.