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Elisabeth Anne Marley

from Dallas, TX
Age ~53
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Also known as:
Elisabeth A Marley, Elisabeth Marley Koontz, Elisabeth M Koontz
Phone and address:
2031 Peavy Rd, Dallas, TX 75228
Connected to:
Angelica E Marley, 28Chrissie M Marley, 46Christy L Marley, 55Elyse D Marley, 71Henriette E Marley, 90Isaac R Marley, 62Jenna L Marley, 38Jupiter G Marley, 36Kai K Marley, 37Kaitlyn E Marley, 29

Elisabeth Marley Phones & Addresses

  • 2031 Peavy Rd, Dallas, TX 75228
  • 9047 Redondo Dr, Dallas, TX 75218
  • 31 Lewis St, Medford, MA 02155
  • Fort Mitchell, KY
  • Richardson, TX
  • Cincinnati, OH

Work

Company: Qorvo, inc. Oct 2015 to Jun 2018 Position: Manager, project management

Education

Degree: Master of Science, Masters School / High School: Massachusetts Institute of Technology

Skills

Semiconductors • Characterization • Electronics • Cmos • Nanotechnology • Metrology • Semiconductor Industry • Physics • Research • Photonics • Ic • Thin Films • Manufacturing • Electrical Engineering • Semiconductor Process • Spc • Mems • Materials Science • Mocvd • Matlab • Silicon • Optics • R

Industries

Semiconductors

Resumes

Resumes

Elisabeth Marley Photo 1

Senior Manager, Project Management

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Location:
Dallas, TX
Industry:
Semiconductors
Work:
Qorvo, Inc. Oct 2015 - Jun 2018
Manager, Project Management
Qorvo, Inc. Oct 2015 - Jun 2018
Senior Manager, Project Management
Qorvo, Inc. Jun 2015 - Sep 2015
Project Manager
Triquint Semiconductor May 2014 - Jun 2015
Rf Gan and Gaas Applications Engineer
Triquint Semiconductor May 2012 - May 2014
Advanced Supplier Quality Manager and Internal Epitaxy Production Process Engineer
Education:
Massachusetts Institute of Technology
Master of Science, Masters Southern Methodist University
Bachelors, Bachelor of Science In Electrical Engineering, Electrical Engineering Massachusetts Institute of Technology
Doctorates, Doctor of Philosophy
Skills:
Semiconductors
Characterization
Electronics
Cmos
Nanotechnology
Metrology
Semiconductor Industry
Physics
Research
Photonics
Ic
Thin Films
Manufacturing
Electrical Engineering
Semiconductor Process
Spc
Mems
Materials Science
Mocvd
Matlab
Silicon
Optics
R

Publications

Us Patents

Strain Modulation In Active Areas By Controlled Incorporation Of Nitrogen At Si-Sio2 Interface

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US Patent:
20090159981, Jun 25, 2009
Filed:
Dec 24, 2008
Appl. No.:
12/343780
Inventors:
Hiroaki Niimi - Dallas TX, US
Elisabeth Marley - Dallas TX, US
Assignee:
TEXAS INSTRUMENTS INCORPORATED - Dallas TX
International Classification:
H01L 27/092
H01L 21/762
H01L 21/8234
US Classification:
257369, 438424, 438296, 257E21546, 257E27062, 257E21616
Abstract:
Adding nitrogen to the Si—SiO2 interface at STI sidewalls increases carrier mobility in MOS transistors, but control of the amount of nitrogen has been problematic due to loss of the nitrogen during liner oxide growth. This invention discloses a method of forming STI regions which have a controllable layer of nitrogen atoms at the STI sidewall interface. Nitridation is performed on the STI sidewalls by exposure to a nitrogen-containing plasma, by exposure to NH3 gas at high temperatures, or by deposition of a nitrogen-containing thin film. Nitrogen is maintained at a level of 1.010to 3.010atoms/cm, preferably 2.010to 2.410atoms/cm, at the interface after growth of a liner oxide by adding nitrogen-containing gases to an oxidation ambient. The density of nitrogen is adjusted to maximize stress in a transistor adjacent to the STI regions. An IC fabricated according to the inventive method is also disclosed.
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Elisabeth Anne Marley from Dallas, TX, age ~53 Get Report