Emmanuel P Guidotti

6992011, Jan 31, 2006

Jan 15, 2003

10/342645

Takenao Nemoto - Kanagawa, JP
Emmanuel Guidotti - Gilbert AZ, US
Gert Leusink - Hopewell Junction NY, US

Tokyo Electron Limited - Tokyo

H01L 21/302

438706, 438714, 134 11

A cleaning method is provided using a cleaning gas mixture of hydrogen and inert gas, for example a mixture in which the hydrogen content is between 20 percent and 80 percent by volume, provided to the chamber of a semiconductor wafer processing apparatus and an ICP power source only to generate a high density plasma in the gas mixture without biasing the surface to be cleaned. In examples of the invention, Si and SiOcontaminants or CFx contaminants are cleaned from a silicon contact prior to subsequent metal deposition. In another example of the invention, silicon residue is cleaned from internal chamber surfaces before oxide etching to recover the baseline oxide etch rate.

7270848, Sep 18, 2007

Nov 23, 2004

10/996145

Kenji Suzuki - Guilderland NY, US
Emmanuel P. Guidotti - Fishkill NY, US
Gerrit J. Leusink - Saltpoint NY, US
Fenton R. McFeely - Ossining NY, US
Sandra G. Malhotra - Beacon NY, US

Tokyo Electron Limited - Tokyo
International Business Machines Corp. - Armonk NY

C23C 16/06

427250, 4272557, 427 968

A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.

7459396, Dec 2, 2008

Sep 29, 2006

11/537575

Kenji Suzuki - Guilderland NY, US
Emmanuel P. Guidotti - Fishkill NY, US
Gerrit J. Leusink - Saltpoint NY, US
Masamichi Hara - Clifton Park NY, US
Daisuke Kuroiwa - Clifton Park NY, US

Tokyo Electron Limited - Tokyo

H01L 21/00

438682, 438634, 438636, 438678, 438767, 438768

A method for depositing a Ru metal layer on a patterned substrate from a film precursor vapor delivered from a multi-tray film precursor evaporation system. The method comprises providing a patterned substrate in a process chamber of a deposition system, and forming a process gas containing Ru(CO)precursor vapor and a carrier gas comprising CO gas. The process gas is formed by: providing a solid Ru(CO)precursor in a plurality of spaced trays within a precursor evaporation system, wherein each tray is configured to support the solid precursor and wherein the plurality of spaced trays collectively provide a plurality of surfaces of solid precursor; heating the solid precursor in the plurality of spaced trays in the precursor evaporation system to a temperature greater than about 60 C. and maintaining the solid precursor at the temperature to form the vapor; and flowing the carrier gas in contact with the plurality of surfaces of the solid precursor during the heating to capture Ru(CO)precursor vapor in the carrier gas as the vapor is being formed at the plurality of surfaces. The method further includes transporting the process gas from the precursor evaporation system to the process chamber and exposing the patterned substrate to the process gas to deposit a Ru metal layer on the patterned substrate by a thermal CVD.

7484315, Feb 3, 2009

Dec 9, 2004

11/007962

Kenji Suzuki - Guilderland NY, US
Emmanuel P. Guidotti - Fishkill NY, US
Gerrit J. Leusink - Saltpoint NY, US
Masamichi Hara - Clifton Park NY, US
Daisuke Kuroiwa - Clifton Park NY, US

Tokyo Electron Limited - Tokyo

F26B 25/10

34237, 261 231, 118726, 4272481

A replaceable precursor tray for use with a high conductance, multi-tray solid precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system is configured to be coupled to the process chamber of a thin film deposition system, and it includes a base tray with one or more stackable upper trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.

7488512, Feb 10, 2009

Dec 9, 2004

11/007961

Kenji Suzuki - Guilderland NY, US
Emmanuel P. Guidotti - Fishkill NY, US
Gerrit J. Leusink - Saltpoint NY, US
Masamichi Hara - Clifton Park NY, US
Daisuke Kuroiwa - Clifton Park NY, US
Sandra G. Malhotra - Beacon NY, US
Fenton McFeely - Ossining NY, US

Tokyo Electron Limited - Tokyo

B05D 3/00
B22F 3/00

427190, 427189, 427593, 427250, 419 1, 419 11, 419 17, 419 18

In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using one or more of dipping techniques, spin-on techniques, and sintering techniques.

7638002, Dec 29, 2009

Nov 29, 2004

10/998420

Kenji Suzuki - Guilderland NY, US
Emmanuel P. Guidotti - Fishkill NY, US
Gerrit J. Leusink - Saltpoint NY, US
Masamichi Hara - Clifton Park NY, US
Daisuke Kuroiwa - Clifton Park NY, US

Tokyo Electron Limited - Tokyo

C23C 16/00
B01D 7/00

118726, 392389

A high conductance, multi-tray solid precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system includes a base tray with one or more upper trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.

20050279384, Dec 22, 2005

Jun 17, 2004

10/710086

Emmanuel Guidotti - Fishkill NY, US

B08B007/04

134018000, 134022100, 134019000, 118715000, 156345100

A method and system for controlling an exothermic chamber cleaning process in a process chamber. The method includes exposing a system component to a cleaning gas in the chamber cleaning process to remove a material deposit from the system component, monitoring at least one temperature-related system component parameter in the chamber cleaning process, determining the cleaning status of the system component from the monitoring, and based upon the status from the determining, performing one of the following: (a) continuing the exposing and monitoring, or (b) stopping the process.

20060068588, Mar 30, 2006

Sep 30, 2004

10/953466

Hideaki Yamasaki - Kofu-City, JP
Kenji Suzuki - Guilderland NY, US
Emmanuel Guidotti - Fishkill NY, US
Enrico Mosca - Ossining NY, US
Gert Leusink - Saltpoint NY, US
Yumiko Kawano - Kofu-city, JP
Fenton McFeely - Ossining NY, US
Sandra Malhotra - Beacon NY, US

Tokyo Electron Limited - Tokyo
International Business Machines Corporation - Armonk NY

H01L 21/44

438681000, 438686000

A method for depositing Ru and Re metal layers on substrates with high deposition rates, low particulate contamination, and good step coverage on patterned substrates is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas and a metal precursor selected from the group consisting of a ruthenium-carbonyl precursor and a rhenium-carbonyl precursor. The method further includes depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr.