US Patent:
20080111157, May 15, 2008
Inventors:
Linh Dang - Lawndale CA, US
Wayne Yoshida - Hermosa Beach CA, US
Xiaobing Mei - Manhattan Beach CA, US
Jennifer Wang - Redondo Beach CA, US
Po-Hsin Liu - Anaheim CA, US
Jane Lee - Torrance CA, US
Weidong Liu - San Marino CA, US
Michael Barsky - Sherman Oaks CA, US
Richard Lai - Redondo Beach CA, US
Assignee:
Northrop Grumman Corporation - Los Angeles CA
International Classification:
H01L 29/778
H01L 21/28
US Classification:
257194, 438579, 257E29246, 257E21158
Abstract:
In a method of forming a semiconductor device on a semiconductor substrate (), a photoresist layer () is deposited on the semiconductor substrate; a window () is formed in the photoresist layer () by electron beam lithography; a conformal layer () is deposited on the photoresist layer () and in the window (); and substantially all of the conformal layer () is selectively removed from the photoresist layer () and a bottom portion of the window to form dielectric sidewalls () in the window ().