Xiaobing B Mei

20080111157, May 15, 2008

Nov 14, 2006

11/598817

Linh Dang - Lawndale CA, US
Wayne Yoshida - Hermosa Beach CA, US
Xiaobing Mei - Manhattan Beach CA, US
Jennifer Wang - Redondo Beach CA, US
Po-Hsin Liu - Anaheim CA, US
Jane Lee - Torrance CA, US
Weidong Liu - San Marino CA, US
Michael Barsky - Sherman Oaks CA, US
Richard Lai - Redondo Beach CA, US

Northrop Grumman Corporation - Los Angeles CA

H01L 29/778
H01L 21/28

257194, 438579, 257E29246, 257E21158

In a method of forming a semiconductor device on a semiconductor substrate (), a photoresist layer () is deposited on the semiconductor substrate; a window () is formed in the photoresist layer () by electron beam lithography; a conformal layer () is deposited on the photoresist layer () and in the window (); and substantially all of the conformal layer () is selectively removed from the photoresist layer () and a bottom portion of the window to form dielectric sidewalls () in the window ().

20080258242, Oct 23, 2008

Apr 19, 2007

11/785615

Xiaobing Mei - Manhattan Beach CA, US
Ping-Chih Chang - Gardena CA, US
Michael David Lange - Anaheim CA, US

Northrop Grumman Space and Mission Systems Corp. - Los Angeles CA

H01L 29/66
H01L 21/02

257410, 438167, 438597, 257E49001, 257E21002, 257194

A semiconductor device () is formed on a semi-insulating semiconductor substrate () including a channel layer (), a spacer layer (), an electron supply layer (), and a barrier layer (). A composite layer () is formed over the barrier layer (). A metal () is deposited over the composite layer (). The metal () is annealed to promote a chemical reaction between the metal () and the composite layer () in which a portion of the metal sinks into the composite layer () and forms an ohmic contact with the composite layer.

20090065811, Mar 12, 2009

Sep 7, 2007

11/851968

Ping-Chih Chang - Gardena CA, US
Xiaobing Mei - Manhattan Beach CA, US
Augusto Gutierrez-Aitken - Redondo Beach CA, US

H01L 29/737
H01L 21/3205

257197, 438605, 257E21294, 257E29188

A semiconductor device with ohmic contact is provided with a method of making the same. In one embodiment, a method is provided for fabricating a semiconductor device. The method comprises providing a semiconductor structure with a N-type doped semiconductor contact layer, forming a platinum contact portion over the N-type doped semiconductor contact layer, forming an adhesive contact portion over the platinum contact portion, forming a barrier contact portion over the adhesive contact portion, and forming a gold contact portion over the barrier contact portion. The method further comprises annealing the semiconductor structure to alloy the platinum contact portion with the N-type doped semiconductor contact layer to form a platinum/semiconductor alloyed diffusion contact barrier substantially disposed within the N-type doped semiconductor contact layer.

20090206369, Aug 20, 2009

Apr 29, 2009

12/432113

Linh Dang - Lawndale CA, US
Wayne Yoshida - Hermosa Beach CA, US
Xiaobing Mei - Manhattan Beach CA, US
Jennifer Wang - Redondo Beach CA, US
Po-Hsin Liu - Anaheim CA, US
Jane Lee - Torrance CA, US
Weidong Liu - San Marino CA, US
Michael Barsky - Sherman Oaks CA, US
Richard Lai - Redondo Beach CA, US

NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP. - Los Angeles CA

H01L 29/778

257194, 257E29246

In a method of forming a semiconductor device on a semiconductor substrate (), a photoresist layer () is deposited on the semiconductor substrate; a window () is formed in the photoresist layer () by electron beam lithography; a conformal layer () is deposited on the photoresist layer () and in the window (); and substantially all of the conformal layer () is selectively removed from the photoresist layer () and a bottom portion of the window to form dielectric sidewalls () in the window ().