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Handong D Li

from Pittsburgh, PA
Age ~58
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Also known as:
Li D Handong, Lihandong Da
Phone and address:
1518 King Charles Dr, Pittsburgh, PA 15237
(412) 364-1705
Related to:
Suining LiAaron Y Li, 32Wuxing Li, 50Yu U Li, 53Dong Li, 57Li XueyingXueying Li, 46
Connected to:
Abbey Li, 34Abie Li, 43Aifang Li, 57Alanna Li, 30Alvin G Li, 49Anbo Li, 51Anchen Li, 35Antony T Li, 82Baiqi Li, 38Baomei Li, 31

Handong Li Phones & Addresses

  • 1518 King Charles Dr, Pittsburgh, PA 15237 (412) 364-1705
  • 10 Vairo Blvd, State College, PA 16803 (814) 237-2565 (814) 861-4521
  • 609 Easterly Dr, State College, PA 16801 (814) 235-1473
  • 905 Aaron Dr, State College, PA 16803 (814) 237-5957
  • 950 Aaron Dr, State College, PA 16803
  • Wexford, PA

Resumes

Resumes

Handong Li Photo 1

Engineer

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Location:
Pittsburgh, PA
Industry:
Semiconductors
Work:
Ei Detections and Imaging System
Engineer
Education:
Penn State University 1998 - 2004
Doctorates, Doctor of Philosophy
Skills:
Materials Science
Thin Films
Afm
Engineering Management
Semiconductors
Spc
Manufacturing
Scanning Electron Microscopy
Ic
Characterization
Nanofabrication
Handong Li Photo 2

Handong Li

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Publications

Us Patents

Use Of Sacrificial Layers In The Manufacture Of High Performance Systems On Tailored Substrates

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US Patent:
7309620, Dec 18, 2007
Filed:
Jan 13, 2003
Appl. No.:
10/340723
Inventors:
Stephen J. Fonash - State College PA, US
Handong Li - University Park PA, US
Youngchul Lee - State College PA, US
Joseph D. Cuiffi - State College PA, US
Daniel J. Hayes - State College PA, US
Assignee:
The Penn State Research Foundation - University Park PA
International Classification:
H01L 21/00
US Classification:
438 53, 438960, 438977, 257E33018, 257E21151
Abstract:
The invention relates to methods for preparing a removable system on a mother substrate. The method deposits a high surface to volume sacrificial layer on a mother substrate and stabilizes the sacrificial layer by a) removing volatile chemical species in and on the sacrificial layer and/or b) modifying the surface of the layer. The method coats over the sacrificial layer with a capping medium. A system is the fabricated on the capping medium. The method provides through holes to access the sacrificial layer. The method may also apply a top layer onto the system to form a covered system. The invention also includes the step of removing the sacrificial layer to release the system from the mother substrate. Methods of the invention also include selectively removing a portion of the system and capping layers to form void regions defining an array of islands composed of device, structure, or system and capping layer regions, and optionally filling the island-defining void region with a sacrificial material. In such methods the sacrificial material and the high surface to volume sacrificial layer are removed to release the system from the mother substrate.

Lateral Collection Photovoltaics

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US Patent:
8294025, Oct 23, 2012
Filed:
Jan 10, 2008
Appl. No.:
11/972491
Inventors:
Stephen J. Fonash - State College PA, US
Handong Li - State College PA, US
David Stone - Anaheim CA, US
Assignee:
Solarity, LLC - Harrisburg PA
International Classification:
H01L 31/02224
US Classification:
136256, 136252, 136263, 257 40, 257431, 257448, 257459
Abstract:
Lateral collection photovoltaic (LCP) structures based on micro- and nano-collecting elements are used to collect photogenerated carriers. In one set of embodiments, the collecting elements are arrayed on a conducting substrate. In certain versions, the collecting elements are substantially perpendicular to the conductor. In another set of embodiments, the micro- or nano-scale collecting elements do not have direct physical and electrical contact to any conducting substrate. In one version, both anode and cathode electrodes are laterally arrayed. In another version, the collecting elements of one electrode are a composite wherein a conductor is separated by an insulator, which is part of each collector element, from the opposing electrode residing on the substrate. In still another version, the collection of one electrode structure is a composite containing both the anode and the cathode collecting elements for collection. An active material is positioned among the collector elements.

Method Of Making A Semiconductor Radiation Detector

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US Patent:
20130264669, Oct 10, 2013
Filed:
Apr 10, 2012
Appl. No.:
13/442957
Inventors:
Handong Li - Pittsburgh PA, US
Michael Prokesch - Gibsonia PA, US
John Francis Eger - Bentleyville PA, US
Assignee:
Endicott Interconnect Technologies, Inc. - Endicott NY
International Classification:
H01L 27/14
H01L 31/18
US Classification:
257431, 438 68, 257E31001, 257E27122
Abstract:
A method of making a semiconductor radiation detector wherein the metal layers which serve as the cathode and anode electrodes are recessed from the designated prospective dice lines which define the total upper and lower surface areas for each detector such that the dicing blade will not directly engage the metal during dicing and therefore prevent metal from intruding upon (smearing) the vertical side walls of the detector substrate.

Device Performance Prediction Using Material Properties

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US Patent:
20230053346, Feb 23, 2023
Filed:
Aug 23, 2022
Appl. No.:
17/893682
Inventors:
- Sedgefield, GB
Handong Li - Pittsburgh PA, US
Brian William Harris - Butler PA, US
Carl D. Brunetta - Greensburg PA, US
International Classification:
G01N 23/18
G01N 23/083
G01N 23/046
Abstract:
One embodiment provides a method for predicting the performance of a device based upon parameters of an underlying material, comprising: measuring a predetermined parameter of a material to be used in manufacturing the device; identifying, from a value generated from the measuring, a value of a property of the material; and determining a predicted performance of the device by correlating the value of the property to a performance value. Other aspects are described and claimed.
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Handong D Li from Pittsburgh, PA, age ~58 Get Report