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Jeffrey J Figiel

from Albuquerque, NM
Age ~64
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Also known as:
Jeff J Figiel, Jeff M Figiel, Jeffery J Figiel, Jefferey Figiel
Phone and address:
7106 Greenmont Ct NE, Albuquerque, NM 87109
(505) 856-0042
Related to:
Jennifer H Watson, 63Mary T Figiel, 64Loriel Figiel, 63Lauren M Figiel, 33Greg J Figiel, 40Reid A Figiel, 37Anna N Weddington, 63Samantha Hill, 35
Connected to:
Brent J Figiel, 44Candee R Figiel, 67Carrie E Figiel, 56Elzbieta Figiel, 41Justin R Figiel, 43Alecia A Figieroa, 49Carlos R Figirova, 43Karen Figirova, 55Lisa M Figlan, 36Matthew S Figlan, 63

Jeffrey Figiel Phones & Addresses

  • 7106 Greenmont Ct NE, Albuquerque, NM 87109 (505) 856-0042
  • 12116 Apache Ave NE, Albuquerque, NM 87112
  • 2601 Sandler Dr NE, Albuquerque, NM 87112
  • Rio Rancho, NM
  • Flagstaff, AZ
  • 7106 Greenmont Ct NE, Albuquerque, NM 87109 (505) 660-8136

Work

Company: Sandia national laboratories Position: Electronics technician at sandia national laboratories

Education

Degree: Associate degree or higher

Industries

Defense & Space

Resumes

Resumes

Jeffrey Figiel Photo 1

Electronics Technician At Sandia National Laboratories

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Location:
3260 Spirit Dr southeast, Albuquerque, NM 87106
Industry:
Defense & Space
Work:
Sandia National Laboratories
Electronics Technician at Sandia National Laboratories

Business Records

Name / Title
Company / Classification
Phones & Addresses
Jeffrey Figiel
Treasurer
HERITAGE EAST ASSOCIATION OF RESIDENTS
PO Box 92465, Albuquerque, NM 87199
9415 Devargas Loop Ne  , Albuquerque, NM 87109
7106 Greenmont Ct Ne  , Albuquerque, NM 87109

Publications

Us Patents

Structural Tuning Of Residual Conductivity In Highly Mismatched Iii-V Layers

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US Patent:
6406931, Jun 18, 2002
Filed:
Oct 12, 1999
Appl. No.:
09/416385
Inventors:
Jung Han - Albuquerque NM
Jeffrey J. Figiel - Albuquerque NM
Assignee:
Sandia Corporation - Albuquerque NM
International Classification:
H01L 2100
US Classification:
438 46
Abstract:
A new process to control the electrical conductivity of gallium nitride layers grown on a sapphire substrate has been developed. This process is based on initially coating the sapphire substrate with a thin layer of aluminum nitride, then depositing the gallium nitride thereon. This process allows one to controllably produce gallium nitride layers with resistivity varying over as much as 10 orders of magnitude, without requiring the introduction and activation of suitable dopants.
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Jeffrey J Figiel from Albuquerque, NM, age ~64 Get Report