Inventors:
Junichi Sonoda - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Kenji Iso - Fujisawa, JP
Steven P. DenBaars - Goleta CA, US
Makoto Saito - Santa Barbara CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01L 33/00
H01L 21/20
US Classification:
36231102, 257 98, 438 29, 257E33068, 257E2109, 257E33067
Abstract:
A gallium nitride (GaN) based light emitting device, wherein the device comprises a first surface and a second surface, and the first surface and second surface are separated by a thickness of less than 100 micrometers, and preferably less than 20 micrometers. The first surface may be roughened or textured. A silver or silver alloy may be deposited on the second surface. The second surface of the device may be bonded to a permanent substrate.