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Lorenz Lechner Phones & Addresses

  • Arlington, VA
  • San Ramon, CA
  • Dublin, CA

Work

Company: Zeiss group Oct 2018 to Apr 2019 Position: Senior scientist

Education

Degree: Doctorates, Doctor of Science School / High School: Heksinki University of Technology 2005 to 2009

Skills

Microscopy • Materials Science • Electron Microscopy • Nanotechnology • Scanning Electron Microscopy • Fib • Characterization • Physics • Tem • R&D • Afm • Nanomaterials • Science • Semiconductors • Optical Microscopy • Sensors • Research and Development • Image Analysis • Photolithography • Experimentation • Laboratory • Mems • Latex • Simulations • Design of Experiments • Nanofabrication • Scanning Probe Microscopy • Condensed Matter Physics • Solid State Physics • Lithography • Helium Ion Microscopy • Vacuum • Cryogenics • Surface Analysis • Matlab • Image Processing • Microfabrication • Signal Processing • Electron Beam Lithography • Edx • Experimental Physics • Focused Ion Beam • Presentations • Marketing Strategy • Ontology Engineering • Semiconductor Failure Analysis • Electronics • Product Development • Product Marketing

Languages

English • German • French • Finnish

Interests

Recumbents • Technology • Foresight • Him • Fib • Electron Microscopy • Nanoscience • Biotech

Industries

Nanotechnology

Resumes

Resumes

Lorenz Lechner Photo 1

Chief Executive Officer

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Location:
San Francisco, CA
Industry:
Nanotechnology
Work:
Zeiss Group Oct 2018 - Apr 2019
Senior Scientist

Zeiss Microscopy Jan 2018 - Apr 2019
Technical Lead

Kleindiek Jan 2018 - Apr 2019
Chief Executive Officer

Zeiss Group Jan 2017 - Dec 2017
Product Marketing Manager

Carl Zeiss X-Ray Microscopy Inc. Feb 2016 - Dec 2016
Segment Marketing Technical Lead
Education:
Heksinki University of Technology 2005 - 2009
Doctorates, Doctor of Science
Aalto University 2005 - 2009
University of Regensburg 1999 - 2005
Master of Science, Masters, Physics
Skills:
Microscopy
Materials Science
Electron Microscopy
Nanotechnology
Scanning Electron Microscopy
Fib
Characterization
Physics
Tem
R&D
Afm
Nanomaterials
Science
Semiconductors
Optical Microscopy
Sensors
Research and Development
Image Analysis
Photolithography
Experimentation
Laboratory
Mems
Latex
Simulations
Design of Experiments
Nanofabrication
Scanning Probe Microscopy
Condensed Matter Physics
Solid State Physics
Lithography
Helium Ion Microscopy
Vacuum
Cryogenics
Surface Analysis
Matlab
Image Processing
Microfabrication
Signal Processing
Electron Beam Lithography
Edx
Experimental Physics
Focused Ion Beam
Presentations
Marketing Strategy
Ontology Engineering
Semiconductor Failure Analysis
Electronics
Product Development
Product Marketing
Interests:
Recumbents
Technology
Foresight
Him
Fib
Electron Microscopy
Nanoscience
Biotech
Languages:
English
German
French
Finnish

Publications

Us Patents

Method Of Operating A Microscope

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US Patent:
20180172973, Jun 21, 2018
Filed:
Dec 15, 2017
Appl. No.:
15/843441
Inventors:
- Jena, DE
Thomas Anthony Case - Walnut Creek CA, US
Lorenz Lechner - Dublin CA, US
International Classification:
G02B 21/36
G06T 7/73
Abstract:
A method of operating a microscope comprises recording a first image Iof a sample, wherein the first image contains a first feature F; recording a second image Iof the sample, wherein the second image contains a second feature Farranged at a distance from the first feature; displacing the sample relative to the microscope by a displacement ; recording a third image Iof the sample, wherein the third image contains the second feature; recording a fourth image Iof the sample, wherein the fourth image contains a third feature Farranged at a distance from the second feature; and determining a position of the third feature relative to the first feature based on the first, second, third and fourth images.

Method For Preparing Cross-Sections By Ion Beam Milling

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US Patent:
20170011885, Jan 12, 2017
Filed:
Jul 9, 2015
Appl. No.:
14/795489
Inventors:
- Jena, DE
Lorenz Lechner - Dublin CA, US
International Classification:
H01J 37/305
Abstract:
The disclosure provides a method for preparing a cross-section of a sample by milling with a focused ion beam. The cross-section is to be prepared at a pre-defined position. The method includes excavating a trench by milling in a first milling direction. The first milling direction leads away from the position of the cross-section to be prepared. The method also includes excavating the cross-section by enlarging the trench by milling in the reversed milling direction. The second milling direction leads towards the position of the cross-section to be prepared, whereupon the milling is completed at the position where the cross-section is to be cut. The desired largest milling depth is achieved at the completion of this milling step.

Method For Analyzing And/Or Processing An Object As Well As A Particle Beam Device For Carrying Out The Method

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US Patent:
20160035534, Feb 4, 2016
Filed:
Aug 1, 2014
Appl. No.:
14/449441
Inventors:
- Jena, DE
Lorenz Lechner - Dublin CA, US
Michal Postolski - Barlinek, PL
Ralph Pulwey - Aalen, DE
Marcin Janaszewski - Pebrenice, PL
International Classification:
H01J 37/20
H01J 37/147
H01J 37/26
Abstract:
The application relates to a method for analyzing, in particular for imaging, and/or processing of an object as well as a particle beam device for carrying out this method. In particular, the particle beam device of this application is an electron beam device and/or an ion beam device. The method in particular comprises the control unit providing a first control parameter, wherein a beam guiding unit is controlled using the first control parameter for guiding the particle beam and/or wherein a moving unit is controlled using the first control parameter for moving an object holder, correlating a position of the object holder in a second coordinate system to the object position on the surface of the object, identifying a first coordinate transformation between the first coordinate system and the second coordinate system, identifying an orientation position of a distinctive feature on the surface of the object and identifying first coordinates of the orientation position in the first coordinate system, the control unit providing a second control parameter, wherein the second control parameter is used for at least one of: controlling the beam guiding unit for guiding the particle beam, controlling the moving unit for moving the object holder or controlling a detector, identifying again the orientation position of the distinctive feature and identifying second coordinates of the orientation position in the first coordinate system, comparing the first coordinates with the second coordinates, identifying a local displacement of the first coordinates to the second coordinates, identifying a second coordinate transformation using the first coordinate transformation and the local displacement and identifying a position of an area to be analyzed and/or processed on the surface of the object.
Lorenz G Lechner from Arlington, VA Get Report