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Mark S Usefara

from Falls Church, VA
Age ~48
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Related to:
David C Boze, 86Toriano L Harvey, 51Alaina M Lockowandt, 38Leonard J Usefara, 73Carol D Usefara, 71Michael B Usefara, 52
Connected to:
Lorraine Useforge, 91Aliya Useinova, 75Emina Useinovic, 51Sunaj Useinov, 57Jerome J Uselman, 43Alan W Uselton, 59Angie D Uselton, 54Corbin W Uselton, 33Heather A Uselton, 41Janet L Uselton, 91

Mark Usefara Phones & Addresses

  • 1011 N Sycamore St, Falls Church, VA 22046
  • Arlington, VA
  • College Park, MD
  • 1722 Light St, Baltimore, MD 21230
  • 915 Light St, Baltimore, MD 21230
  • Abingdon, MD
  • Richford, NY

Work

Company: Deloitte Aug 1, 2016 Position: Manager

Education

Degree: Master of Business Administration, Masters School / High School: University of Maryland - Robert H. Smith School of Business 2004 to 2007

Skills

Program Management • Process Improvement • Project Management • Earned Value Management • Government Contracting • Proposal Writing • Six Sigma • Dod • Management • Risk Management • Analysis • Contract Pricing

Industries

Defense & Space

Resumes

Resumes

Mark Usefara Photo 1

Manager

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Location:
9238 Gaither Rd, Gaithersburg, MD 20877
Industry:
Defense & Space
Work:
Deloitte
Manager
Meso Scale Diagnostics, Llc. Nov 2009 - Aug 2016
Business Development Associate
Northrop Grumman Corporation Jun 2001 - Oct 2009
Program Manager
Education:
University of Maryland - Robert H. Smith School of Business 2004 - 2007
Master of Business Administration, Masters University of Maryland 1997 - 2001
Bachelors, Bachelor of Science, Engineering University of Maryland
Master of Business Administration, Masters Suny Broome Community College
Associates
Skills:
Program Management
Process Improvement
Project Management
Earned Value Management
Government Contracting
Proposal Writing
Six Sigma
Dod
Management
Risk Management
Analysis
Contract Pricing

Publications

Us Patents

Method Of Producing Large Area Sic Substrates

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US Patent:
20090014756, Jan 15, 2009
Filed:
Jul 13, 2007
Appl. No.:
11/826278
Inventors:
Narsingh Bahadur Singh - Ellicott City MD, US
Brian P. Wagner - Baltimore MD, US
David J. Knuteson - Columbia MD, US
David Kahler - Arbutus MD, US
Andre E. Berghmans - Owing Mills MD, US
Michael Aumer - Raleigh NC, US
Jerry W. Hedrick - Arnold MD, US
Marc E. Sherwin - Catonsville MD, US
Michael M. Fitelson - Columbia MD, US
Mark S. Usefara - Baltimore MD, US
Sean McLaughlin - Severn MD, US
Travis Randall - Baltimore MD, US
Thomas J. Knight - Silver Spring MD, US
International Classification:
H01L 29/739
B32B 5/16
H01L 21/20
US Classification:
257200, 428331, 438492, 438504, 257E29328, 257E21053
Abstract:
A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.

Method And Apparatus For Growth Of High Purity 6H-Sic Single Crystal

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US Patent:
20090220801, Sep 3, 2009
Filed:
Feb 29, 2008
Appl. No.:
12/040785
Inventors:
Brian Wagner - Baltimore MD, US
Travis J. Randall - Baltimore MD, US
Thomas J. Knight - Silver Spring MD, US
David J. Knuteson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Andre E. Berghmans - Owing Mills MD, US
Sean R. McLaughlin - Severn MD, US
Narsingh B. Singh - Ellicott City MD, US
Mark Usefara - Baltimore MD, US
International Classification:
C23C 14/34
B32B 9/04
US Classification:
428446, 20419225
Abstract:
The disclosure relates to a method and apparatus for growth of high-purity 6H SiC single crystal using a sputtering technique. In one embodiment, the disclosure relates to a method for depositing a high purity 6H-SiC single crystal film on a substrate, the method including: providing a silicon substrate having an etched surface; placing the substrate and an SiC source in a deposition chamber; achieving a first vacuum level in the deposition chamber; pressurizing the chamber with a gas; depositing the SiC film directly on the etched silicon substrate from a sputtering source by: heating the substrate to a temperature below silicon melting point, using a low energy plasma in the deposition chamber; and depositing a layer of hexagonal SiC film on the etched surface of the substrate.
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Mark S Usefara from Falls Church, VA, age ~48 Get Report