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Nicholas Campanile Phones & Addresses

  • 4814 N Damen Ave APT 214, Chicago, IL 60625 (773) 960-6173
  • 3900 N Lake Shore Dr APT 23H, Chicago, IL 60613 (773) 857-1435
  • Kalamazoo, MI
  • 1901 Goyer Rd, Kokomo, IN 46902 (219) 457-6844 (765) 459-3865
  • 4118 Ryan Ct, Kokomo, IN 46902 (765) 453-1026
  • Beavercreek, OH
  • Cincinnati, OH
  • Stanford, CA
  • Granger, IN

Resumes

Resumes

Nicholas Campanile Photo 1

Senior Director Finance

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Location:
Chicago, IL
Industry:
Consumer Goods
Work:
Kraft Foods Group - Greater Chicago Area since Apr 2013
Finance Manager

Nestle - Greater Chicago Area Nov 2011 - Apr 2013
Finance Manager - External Manufacturing

Nestle Jun 2008 - Nov 2011
Senior Analyst - Brand Finance and Financial Planning

Delphi Automotive Aug 2001 - Aug 2006
Project Engineer - Semiconductors

Delphi Automotive Jun 1998 - Sep 2000
Project Engineer - Safety Systems
Education:
University of Notre Dame - Mendoza College of Business 2006 - 2008
MBA, Finance and Marketing
Stanford University 2000 - 2001
MS, Electrical Engineering
University of Cincinnati 1993 - 1998
Bachelor of Science (BS), Electrical Engineering
Skills:
Forecasting
Cross Functional Team Leadership
Analysis
Pricing
Strategic Planning
Variance Analysis
Leadership
Finance
Six Sigma
Strategic Financial Planning
Business Planning
Managerial Finance
Sourcing
Product Development
Corporate Finance
Analytical Skills
Nicholas Campanile Photo 2

Wheel Chair Driver

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Work:

Wheel Chair Driver

Publications

Us Patents

Technique For Improving Negative Potential Immunity Of An Integrated Circuit

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US Patent:
20060231890, Oct 19, 2006
Filed:
Apr 15, 2005
Appl. No.:
11/107084
Inventors:
Jack Glenn - Kokomo IN, US
Troy Clear - Kokomo IN, US
Mark Gose - Kokomo IN, US
Doublas Osborn - Kokomo IN, US
Nicholas Campanile - Kokomo IN, US
International Classification:
H01L 29/76
H01L 29/00
US Classification:
257338000, 257544000, 257E29256
Abstract:
An integrated circuit (IC) with negative potential protection includes at least one double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket, which is formed in a second-type substrate. The IC also includes a second-type+ isolation ring formed in the substrate to isolate the first-type epitaxial pocket and a first-type+ ring formed through the first-type epitaxial pocket between the second-type+ isolation ring and the DMOS cell.
Nicholas T Campanile from Chicago, IL, age ~49 Get Report