Resumes
Resumes
Ping Tien Phones & Addresses
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901 Hillsboro Ave, Sunnyvale, CA 94087 (732) 946-9009
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Belle Mead, NJ
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Estell Manor, NJ
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Egg Harbor City, NJ
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9 Carolyn Ct, Holmdel, NJ 07733
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Chatham, NJ
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Palm Coast, FL
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Cupertino, CA
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901 Hillsboro Ave, Sunnyvale, CA 94087
Education
Degree:
Graduate or professional degree
Publications
Wikipedia References
Ping King Tien
About:
Born:
1919
Work:
Position:
Fellow Member of the IEEE • Member of the United States National Academy of Engineering
Business category:Amplifiers
Education:
Academic degree:
Member of the United States National Academy of Sciences
Studied at:Stanford University
Specialty:Electrical engineer
Skills & Activities:
Ascribed status:
American of Chinese descent
Us Patents
Wavelength Tunable Composite Cavity Laser
View pageUS Patent:
49550284, Sep 4, 1990
Filed:
Mar 25, 1988
Appl. No.:
7/173488
Inventors:
Rodney C. Alferness - Holmdel NJ
Gadi Eisenstein - Middletown NJ
Uziel Koren - Fair Haven NJ
Ping K. Tien - Holmdel NJ
Rodney S. Tucker - Howell NJ
Matthew S. Whalen - Rumson NJ
Gadi Eisenstein - Middletown NJ
Uziel Koren - Fair Haven NJ
Ping K. Tien - Holmdel NJ
Rodney S. Tucker - Howell NJ
Matthew S. Whalen - Rumson NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01S 310
US Classification:
372 20
Abstract:
Wavelength tunability and single frequency output are achieved in a coherent light source employing an adjustably controllable reflector. The light source includes a gain medium coupled to a single-mode fiber having a partially reduced cladding region at a predetermined distance from the gain medium. A Bragg reflector is either formed on the reduced cladding region of the single-mode fiber or formed on an external element in close proximity to the reduced cladding region. A single resonant optical cavity is formed by placing another reflector on the side of the gain medium opposite the gain medium-to-fiber coupling. Wavelength tuning of the light source is accomplished by controllably adjusting the period or the Bragg reflector element.
Isolation Of Passive Devices And Integration With Active Devices In Optical Waveguiding Circuits
View pageUS Patent:
39485838, Apr 6, 1976
Filed:
Dec 9, 1974
Appl. No.:
5/531207
Inventors:
Ping King Tien - Chatham Township NJ
Assignee:
Bell Telephone Laboratories, Incorporated - Murray Hill NJ
International Classification:
G02B 514
US Classification:
350 96WG
Abstract:
The comprehensive large scale integration of thin-film optical circuits is made possible by a series of related developments. The key concept is the isolation of the high index substrate, necessary to active devices, wherever it is desired to have a passive device, by the interposition of an oxide layer such as SiO. sub. 2. It is preferred that the passive devices and the SiO. sub. 2 by amorphous. This new arrangement allows the use of discrete thin-film corner reflectors, instead of distributed feedback, in resonant active devices and wherever a reflector or beam-splitter is needed. Further, the active devices may be located photolithographically by etching windows in the SiO. sub. 2 layer. All of the active devices share a common active layer, which forms the passive devices wherever it extends between windows and simultaneously is the light guiding layer throughout.
Wikipedia
Ping King Tien
View pageDr. Ping King Tien (born August 2, 1919), is an electrical engineer and scientist, noted for his contributions to microwave amplifiers and integrated optical circuits ...