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Raymond A Zuhr

from Loudon, TN
Age ~84
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Also known as:
Ray A Zuhr
Phone and address:
420 Lakeview Cove Dr, Loudon, TN 37774
(865) 986-4994
Related to:
Chris ZuhrLynisha S Thomas, 34Erica L Zuhr, 39Mary K Zuhr, 73M Zuhr
Connected to:
Bebe K Zuhra, 28Abdul H Zuhri, 66Muhamed Zuhric, 73Jacob B Zui, 51Cole Zuidema, 32Frank S Zuidema, 69James A Zuidema, 58John J Zuidema, 67Kathy M Zuidema, 68Leland D Zuidema, 69

Raymond Zuhr Phones & Addresses

  • 420 Lakeview Cove Dr, Loudon, TN 37774 (865) 986-4994
  • Oak Ridge, TN

Publications

Us Patents

Apparatus And Method For Selective Area Deposition Of Thin Films On Electrically Biased Substrates

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US Patent:
53545834, Oct 11, 1994
Filed:
Nov 9, 1992
Appl. No.:
7/972778
Inventors:
Raymond A. Zuhr - Oak Ridge TN
Tony E. Haynes - Knoxville TN
Andrzej Golanski - Cheylas, FR
Assignee:
Martin Marietta Energy Systems, Inc. - Oak Ridge TN
International Classification:
B05D 306
US Classification:
427526
Abstract:
An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.

Apparatus And Method For Selective Area Deposition Of Thin Films On Electrically Biased Substrates

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US Patent:
59102209, Jun 8, 1999
Filed:
Aug 5, 1994
Appl. No.:
8/286371
Inventors:
Raymond A. Zuhr - Oak Ridge TN
Tony E. Haynes - Knoxville TN
Andrzej Golanski - Le Cheylas, FR
Assignee:
Martin Marietta Energy Systems, Inc. - Oak Ridge TN
International Classification:
C23C 1604
C23C 1404
US Classification:
118723FI
Abstract:
An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.

Method For Forming Metallic Silicide Films On Silicon Substrates By Ion Beam Deposition

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US Patent:
49083341, Mar 13, 1990
Filed:
Jan 24, 1989
Appl. No.:
7/300863
Inventors:
Raymond A. Zuhr - Oak Ridge TN
Orin W. Holland - Oak Ridge TN
Assignee:
The United States of America as represented by the United States
Department of Energy - Washington DC
International Classification:
H01L 2124
H01L 21265
H01L 21283
US Classification:
437200
Abstract:
Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.
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Raymond A Zuhr from Loudon, TN, age ~84 Get Report