Inventors:
Rodney Lee Robison - Mesa AZ, US
Jacques Faguet - Gilbert AZ, US
Bruce Gittleman - Scottsdale AZ, US
Tugrul Yasar - Scottsdale AZ, US
Frank Cerio - Phoenix AZ, US
Jozef Brcka - Mesa AZ, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
C23C 14/00
C23C 14/32
C25B 11/00
C25B 13/00
US Classification:
20429816, 2041921, 20419213, 20419233, 20429801, 20429803, 20429817, 2042982, 20429822, 20429832, 20429837
Abstract:
An iPVD apparatus () is programmed to deposit material () onto semiconductor substrates () by cycling between deposition and etch modes within a vacuum chamber (). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters.
