Rudolph W Modster

47104333, Dec 1, 1987

Jul 9, 1986

6/883897

James M. Rowe - Torrance CA
Rudolph W. Modster - Los Angeles CA

Northrop Corporation - Hawthorne CA

B21D 3900

428623

Methods are disclosed for the manufacture of optical conductive transparent windows and coatings having high transparency over a wide bandwidth combined with a large acceptance angle of incidence. Particulars for making windows and coatings with gold films of high transparency and low sheet resistance using specified nucleating and barrier layers are given. Examples include windows and coatings constructed for operation in the infrared and ultraviolet.

51734435, Dec 22, 1992

Jun 27, 1990

7/544772

V. Warren Biricik - Rancho Palos Verdes CA
James M. Rowe - Torrance CA
Paul Kraatz - Redondo Beach CA
John W. Tully - Rolling Hills Estates CA
Wesley J. Thompson - Torrance CA
Rudolph W. Modster - Los Angeles CA

Northrop Corporation - Los Angeles CA

H01L 2144

437181

Methods are disclosed for making semiconductor windows which are transparent to light in the infrared range which have good electrical conductivity and are formed of a substrate material (11) having a semiconductor coating (14) having a dopant included therein. The coating is diffused, grown or deposited on one surface of the substrate and is controlled to obtain both low electrical resistivity and high infrared transmissivity. The coating can be formed of the same material as the substrate or can be a different material. Windows having particular thermal properties are formed utilizing zinc selenide and zinc sulfide as the substrate.

47787317, Oct 18, 1988

Feb 13, 1987

7/014326

Paul Kraatz - Redondo Beach CA
James M. Rowe - Torrance CA
John W. Tully - Palos Verdes Estates CA
Vahram W. Biricik - Palos Verdes Estates CA
Wesley J. Thompson - Torrance CA
Rudolph W. Modster - Los Angeles CA

Northrop Corporation - Hawthorne CA

B32B 1504
G02B 522

428623

A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed with a substrate of semi-conductor material which has a conduction modifying dopant diffused, grown or deposited on one surface thereof to a substantial depth so that a layer thereof exhibits reduced resistance to a value below 10 ohms/square. Anti-reflection dielectric layers are stacked on both outer surfaces thereof. The dielectric substrate may be of silicon, germanium or gallium arsenide depending on the transparency bandwidth of interest. The thickness of the substrate and the doping of the surface thereof is closely controlled to obtain both low electrical resistivity and high optical transmissivity.

43525652, Oct 5, 1982

Jan 12, 1981

6/224184

James M. Rowe - Torrance CA
Rudolph W. Modster - Los Angeles CA

G01B 902

356360

A speckle pattern interferometer for use in the non-destructive testing of structures employs a laser beam which is split into reference and object beams having substantially the same optical path lengths to the screen of a sensor, such as a vidicon, where the two beams are combined. The object beam is reflected from the surface of an object under investigation, this object being vibrated periodically. The reference beam passes through an optical fiber cut to the proper length to equalize the length of the reference beam path with that of the object beam. The output of the vidicon is fed to an electronic processor where the signals are appropriately processed to provide a speckle pattern display on a monitor viewing screen.