Suryanarayana K Kaja

from Hopewell Junction, NY

Age ~66

Get Report

Suryanarayana Kaja Phones & Addresses

Hopewell Junction, NY
Orlando, FL
Windermere, FL
Ocoee, FL
Morrisville, NC
Bainbridge, NY

Publications

Us Patents

Process Of Controlling Grain Growth In Metal Films

View page

US Patent:

6361627, Mar 26, 2002

Filed:

May 11, 2000

Appl. No.:

09/569483

Inventors:

Patrick W. DeHaven - Poughkeepsie NY
Charles C. Goldsmith - Poughkeepsie NY
Jeffery L. Hurd - late of Marlboro NY
Suryanarayana Kaja - Hopewell Junction NY
Michele S. Legere - Walden NY
Eric D. Perfecto - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C12D 604

US Classification:

148517, 148518, 148577, 205223, 205224

Abstract:

A process for controlling grain growth in the microstructure of thin metal films (e. g. , copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100ÂC. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than -20Â C. , wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.

Process Of Top-Surface-Metallurgy Plate-Up Bonding And Rewiring For Multilayer Devices

View page

US Patent:

6455331, Sep 24, 2002

Filed:

May 29, 2001

Appl. No.:

09/867364

Inventors:

Roy Yu - Poughkeepsie NY
Kamalesh S. Desai - Hopewell Junction NY
Peter A. Franklin - Marlboro NY
Suryanarayana Kaja - Hopewell Junction NY
Kimberley A. Kelly - Poughkeepsie NY
Yeeling L. Lee - Amawalk NY
Arthur G. Merryman - Hopewell Junction NY
Frank R. Morelli - Marlboro NY
Thomas A. Wassick - Lagrangeville NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2100

US Classification:

438 4, 438 15, 438 17, 438115, 438662

Abstract:

A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is rotated during the second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.

Device Produced By A Process Of Controlling Grain Growth In Metal Films

View page

US Patent:

6638374, Oct 28, 2003

Filed:

Jan 16, 2002

Appl. No.:

10/050285

Inventors:

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B32B 1502

US Classification:

148432, 428606, 428671, 428674

Abstract:

A process for controlling grain growth in the microstructure of thin metal films (e. g. , copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100Â C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than -20Â C. , wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.

Process And Apparatus For Electroplating Microscopic Features Uniformly Across A Large Substrate

View page

US Patent:

6669833, Dec 30, 2003

Filed:

Apr 2, 2003

Appl. No.:

10/405537

Inventors:

Suryanarayana Kaja - Hopewell Junction NY
Chandrika Prasad - Wappingers Falls NY
RongQing Roy Yu - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C25D 500

US Classification:

205 96, 204224 R, 2042299, 204DIG 7, 205123, 205148

Abstract:

A process and apparatus are provided for electroplating a film onto a substrate having a top side including a plating surface includes the following steps. Provide a plating tank with an electroplating bath. Provide an anode in the bath. Place a substrate having a plating surface to be electroplated into the electroplating bath connecting surfaces to be plated to a first cathode. Support a second cathode including a portion thereof with openings therethrough extending across the plating surface of the substrate and positioned between the substrate and the anode. Connect power to provide a negative voltage to the first cathode and provide a negative voltage to the second cathode, and provide a positive voltage to the anode.

High Density Pluggable Connector Array And Process Thereof

View page

US Patent:

62711113, Aug 7, 2001

Filed:

Feb 25, 1998

Appl. No.:

9/030567

Inventors:

Shaji Farooq - Hopewell Junction NY
Suryanarayana Kaja - Hopewell Junction NY
Li Wang - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2144

US Classification:

438614

Abstract:

The present invention relates generally to high density pluggable connector array and process thereof. More particularly, the invention encompasses a structure comprising high density pluggable connector arrays. A process for making such types of high density pluggable connector arrays is also disclosed.

Top-Surface-Metallurgy Plate-Up Bonding And Rewiring For Multilayer Devices

View page

US Patent:

62485997, Jun 19, 2001

Filed:

Dec 2, 1999

Appl. No.:

9/452935

Inventors:

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2100
H01L 2144
H01L 2148
H01L 2150
H01L 2182

US Classification:

438 4

Abstract:

A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.

Method And Structure To Prevent Distortion And Expansion Of Organic Spacer Layer For Thin Film Transfer-Join Technology

View page

US Patent:

63296098, Dec 11, 2001

Filed:

Jun 29, 2000

Appl. No.:

9/607098

Inventors:

Suryanarayana Kaja - Hopewell Junction NY
Chandrika Prasad - Wappingers Falls NY
RongQing Yu - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01R 909

US Classification:

174262

Abstract:

An electronic component structure assembly comprising a thin film structure bonded to a multilayer ceramic substrate (MLC) using solder connections and wherein a non-conductive, compliant spacer preferably with a layer of thermoplastic adhesive on each surface thereof is interposed between the underlying MLC carrier and overlying thin film structure. The spacer includes a pattern of through-holes which corresponds to opposing contact pads of the thin film structure and MLC. The contact pads of at least one of the thin film structure or MLC have posts (e. g. , metallic) thereon and the posts extend partly into the spacer through-holes whereby the height of the posts are greater than the thickness of the adhesive. The posts of the MLC have solder bumps thereon. After reflow under pressure the thin film structure is electrically and mechanically connected to the MLC and the join method has been found to provide a reliable and cost-effective process.

Multilayer Interconnect Systems

View page

US Patent:

54536421, Sep 26, 1995

Filed:

Sep 14, 1994

Appl. No.:

8/305567

Inventors:

Suryanarayana Kaja - Hopewell Junction NY
Eugene J. O'Sullivan - Nyack NY
Alejandro G. Schrott - New York NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2348
H01L 2946
H01L 2962
H01L 2964

US Classification:

257766

Abstract:

The invention provides a multilayer laminar interconnect package comprising a plurality of conductor circuit layers adhering to and sandwiched between a plurality of dielectric polyimide polymer layers where the conductor circuit layers are a circuit pattern of lines of conductive metal. The conductive metal, e. g. copper, is coated with a capping layer of a metal, e. g. cobalt, which capping layer is further characterized as having a thin layer of the capping metal oxide adhered to the surface thereof. The conductive layer is in contact with an overcoated polyimide dielectric layer such that the surface oxidized capping layer forms an adherent barrier layer at the interface of the polyimide and conductive line layers. The invention also provides a process for producing such interconnect packages.