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Thomas Plut Phones & Addresses

  • 1604 Lester Dr, Albuquerque, NM 87112 (505) 298-3060

Professional Records

Medicine Doctors

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Thomas W. Plut

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Specialties:
Sports Medicine
Work:
Lourdes Medical AssociatesLourdes Medical Associates Sports Medicine
728 Marne Hwy STE 100C, Moorestown, NJ 08057
(856) 234-9006 (phone), (856) 234-9233 (fax)
Education:
Medical School
Philadelphia College of Osteopathic Medicine
Graduated: 2003
Procedures:
Arthrocentesis
Electrocardiogram (EKG or ECG)
Osteopathic Manipulative Treatment
Vaccine Administration
Conditions:
Acute Bronchitis
Acute Pharyngitis
Acute Renal Failure
Acute Sinusitis
Acute Upper Respiratory Tract Infections
Languages:
English
Spanish
Description:
Dr. Plut graduated from the Philadelphia College of Osteopathic Medicine in 2003. He works in Moorestown, NJ and specializes in Sports Medicine. Dr. Plut is affiliated with Lourdes Medical Center Burlington.

Business Records

Name / Title
Company / Classification
Phones & Addresses
Thomas Leo Plut
President
THOMAS LEO PLUT PAINT CONTRACTOR, INC

Publications

Us Patents

Mems Packaging With Etching And Thinning Of Lid Wafer To Form Lids And Expose Device Wafer Bond Pads

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US Patent:
8597985, Dec 3, 2013
Filed:
Feb 1, 2012
Appl. No.:
13/364166
Inventors:
Rajen Chanchani - Albuquerque NM, US
Christopher Nordquist - Albuquerque NM, US
Roy H. Olsson - Albuquerque NM, US
Tracy C. Peterson - Albuquerque NM, US
Randy J. Shul - Albuquerque NM, US
Catalina Ahlers - Albuquerque NM, US
Thomas A. Plut - Albuquerque NM, US
Gary A. Patrizi - Albuquerque NM, US
Assignee:
Sandia Corporation - Albuquerque NM
International Classification:
H01L 21/00
US Classification:
438110
Abstract:
In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predetermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

Hybrid Matrix Amplifier

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US Patent:
53789997, Jan 3, 1995
Filed:
Aug 16, 1993
Appl. No.:
8/108941
Inventors:
Jon S. Martens - Sunnyvale CA
Vincent M. Hietala - Placitas NM
Thomas A. Plut - Albuquerque NM
Assignee:
The United States of America as represented by the United States
Department of Energy - Washington DC
International Classification:
H03F 368
H03K 338
US Classification:
330295
Abstract:
The present invention comprises a novel matrix amplifier. The matrix amplifier includes an active superconducting power divider (ASPD) having N output ports; N distributed amplifiers each operatively connected to one of the N output ports of the ASPD; and a power combiner having N input ports each operatively connected to one of the N distributed amplifiers. The distributed amplifier can included M stages of amplification by cascading superconducting active devices. The power combiner can include N active elements. The resulting (N. times. M) matrix amplifier can produce signals of high output power, large bandwidth, and low noise.

High Temperature Superconductor Step-Edge Josephson Junctions Using Ti-Ca-Ba-Cu-O

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US Patent:
53589289, Oct 25, 1994
Filed:
Sep 22, 1992
Appl. No.:
7/949098
Inventors:
David S. Ginley - Evergreen CO
Vincent M. Hietala - Placitas NM
Gert K. G. Hohenwarter - Madison WI
Jon S. Martens - Sunnyvale CA
Thomas A. Plut - Albuquerque NM
Chris P. Tigges - Albuquerque NM
Gregory A. Vawter - Albuquerque NM
Thomas E. Zipperian - Albuquerque NM
Assignee:
Sandia Corporation - Albuquerque NM
International Classification:
H01L 3922
H01L 2712
H01B 1200
US Classification:
525192
Abstract:
A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO. sub. 3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O. sub. 3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

Integrated Resonant Tunneling Diode Based Antenna

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US Patent:
60493089, Apr 11, 2000
Filed:
Mar 27, 1997
Appl. No.:
8/828156
Inventors:
Vincent M. Hietala - Placitas NM
Chris P. Tiggers - Albuquerque NM
Thomas A. Plut - Albuquerque NM
Assignee:
Sandia Corporation - Albuquerque NM
International Classification:
H01Q 138
US Classification:
343700MS
Abstract:
An antenna comprising a plurality of negative resistance devices and a method for making same comprising employing a removable standoff layer to form the gap between the microstrip antenna metal and the bottom contact layer.

Josephson Junction

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US Patent:
54119375, May 2, 1995
Filed:
May 17, 1993
Appl. No.:
8/062672
Inventors:
Joel R. Wendt - Albuquerque NM
Thomas A. Plut - Albuquerque NM
Jon S. Martens - Sunnyvale CA
Assignee:
Sandia Corporation - Albuquerque NM
International Classification:
H01L 2100
US Classification:
505329
Abstract:
A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material.
Thomas A Plut from Albuquerque, NM, age ~67 Get Report