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Vijay K Rawat

from Redwood City, CA
Age ~53
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Also known as:
Vijay Kumar Rawat, Vijay Rawa, Vijay P
Phone and address:
6 Dana Point Ct, Redwood City, CA 94065
Related to:
Ragni Rawat Walker, 46Sanjiv Rawat, 50Antoinette Lewis, 55Mickey Walker, 72Bonita Walker, 45Brett S Rodman, 45Jamika O Butler, 42
Connected to:
Ahmed Rawat, 54Akanksha Rawat, 33Deepaksingh S Rawat, 41Kesar Rawat, 39Megha Rawat, 42Umesh Rawat, 54Upasana Rawat, 40Vandana Rawat, 57Blake Raway, 31Stanley M Raway, 77

Vijay Rawat Phones & Addresses

  • 6 Dana Point Ct, Redwood City, CA 94065
  • 13057 Greg Roy Ln, Herndon, VA 20171 (703) 437-1380
  • 2510 John Eppes Rd, Herndon, VA 20171 (703) 793-0767
  • Oak Hill, VA
  • San Mateo, CA
  • 3363 Breckenridge Ct, Annandale, VA 22003 (703) 698-8019
  • San Francisco, CA
  • New York, NY
  • Mc Lean, VA
  • Ann Arbor, MI

Resumes

Resumes

Vijay Rawat Photo 1

Managing Director

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Location:
6 Dana Point Ct, Redwood City, CA 94065
Industry:
Investment Banking
Work:
Jefferies 2009 - 2015
Senior Vice President, Technology Investment Banking
Growthpoint Technology Partners 2009 - 2015
Managing Director
Jpmorgan Chase & Co. 2004 - 2008
Technology Investment Banking
Sprint 2002 - 2004
Senior Manager
Education:
Makhan Lal Chaturvedi Journalism University
Masters, Master of Arts University of Michigan - Stephen M. Ross School of Business
Master of Business Administration, Masters, Finance University of Southern California
Master of Science, Masters, Electrical Engineering George Mason University
Bachelors, Bachelor of Science, Electronics Engineering
Skills:
Mergers and Acquisitions
Financial Modeling
Valuation
Corporate Finance
Capital Markets
Business Strategy
Corporate Development
Strategy
Private Equity
Investment Banking
Due Diligence
Finance
Management
Financial Analysis
Equities
Investments
Start Ups
Venture Capital
Business Development
Languages:
English
Vijay Rawat Photo 2

Vijay Rawat

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Vijay Rawat Photo 3

Vijay Rawat

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Vijay Rawat

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Vijay Rawat

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Vijay Rawat Photo 8

Vijay Rawat

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Location:
United States

Publications

Us Patents

Metalized Silicon Substrate For Indium Gallium Nitride Light-Emitting Diodes

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US Patent:
20100176369, Jul 15, 2010
Filed:
Apr 15, 2009
Appl. No.:
12/424517
Inventors:
Mark Oliver - Northville IN, US
Vijay Rawat - San Jose CA, US
Timothy Sands - West Lafayette IN, US
Jeremy Schroeder - West Lafayette IN, US
International Classification:
H01L 33/00
H01L 21/20
US Classification:
257013000, 438046000, 257E33008, 257E21090
Abstract:
A light emitting diode having a metallized silicon substrate including a silicon base, a buffer layer disposed on the silicon base, a metal layer disposed on the buffer layer, and light emitting layers disposed on the metal layer. The buffer layer can be AlN, and the metal layer ZrN. The light emitting layers can include GaN and InGaN. The metallized silicon substrate can also include an oxidation prevention layer disposed on the metal layer. The oxidation prevention layer can be AlN. The light emitting diode can be formed using an organometallic vapor phase epitaxy process. The intermediate ZrN/AlN layers enable epitaxial growth of GaN on silicon substrates using conventional organometallic vapor phase epitaxy. The ZrN layer provides an integral back reflector, ohmic contact to n-GaN. The AlN layer provides a reaction barrier, thermally conductive interface layer, and electrical isolation layer.

Near Field Transducer Having Notch Diffusion Barrier

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US Patent:
20150221324, Aug 6, 2015
Filed:
Jan 31, 2014
Appl. No.:
14/170462
Inventors:
- Amsterdam, NL
Joseph A. Bonetti - San Jose CA, US
Jordan A. Katine - Mountain View CA, US
Vijay P.S. Rawat - San Jose CA, US
Neil L. Robertson - Palo Alto CA, US
Erhard Schreck - San Jose CA, US
Matteo Staffaroni - Pleasanton CA, US
Barry C. Stipe - San Jose CA, US
Assignee:
HGST NETHERLANDS B.V. - Amsterdam
International Classification:
G11B 5/31
Abstract:
An apparatus according to one embodiment includes a near field transducer comprising a conductive metal film having a main body, a notch extending from the main body, and a notch diffusion barrier layer interposed between the notch and the main body. An apparatus according to another embodiment includes a write pole, and a near field transducer adjacent the write pole. The near field transducer includes a conductive metal film having a main body, a notch extending from the main body, and a notch diffusion barrier layer interposed between the notch and the main body. The notch diffusion barrier layer includes a metal selected from a group consisting of Rh, W, Mo, Ru, Ir, Co, Ni, Pt, B, and alloys thereof. Additional systems and methods are also presented.

Thermally Stable Au Alloys As A Heat Diffusion And Plasmonic Underlayer For Heat-Assisted Magnetic Recording (Hamr) Media

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US Patent:
20150179204, Jun 25, 2015
Filed:
Dec 24, 2013
Appl. No.:
14/140408
Inventors:
- Amsterdam, NL
Vijay P.S. Rawat - San Jose CA, US
Dieter K. Weller - San Jose CA, US
Assignee:
HGST NETHERLANDS B.V. - Amsterdam
International Classification:
G11B 5/73
Abstract:
According to one embodiment, a magnetic medium includes a plasmonic underlayer having an Au alloy, where the Au alloy includes one or more alloying components that are substantially immiscible in Au; and a magnetic recording layer above the plasmonic underlayer. According to another embodiment, a magnetic medium, includes a multilayered plasmonic underlayer; and a magnetic recording layer above the multilayered plasmonic underlayer.
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Vijay K Rawat from Redwood City, CA, age ~53 Get Report