US Patent:
20120241821, Sep 27, 2012
Inventors:
Jean-Marc Bethoux - Grenoble, FR
Fabrice Letertre - Grenoble, FR
Chris Werkhoven - Gilbert AZ, US
Ionut Radu - Crolles, FR
Oleg Kononchuck - Theys, FR
International Classification:
H01L 29/205
H01L 21/205
C30B 23/02
B32B 15/02
B32B 18/00
US Classification:
257201, 428334, 117106, 438492, 257E29091, 257E2111
Abstract:
A heterostructure that includes, successively, a support substrate of a material having an electrical resistivity of less than 10ohmcm and a thermal conductivity of greater than 100 WmK, a bonding layer, a first seed layer of a monocrystalline material of composition AlInGaN, a second seed layer of a monocrystalline material of composition AlInGaN, and an active layer of a monocrystalline material of composition AlInGaN, and being present in a thickness of between 3 and 100 micrometers. The materials of the support substrate, the bonding layer and the first seed layer are refractory at a temperature of greater than 750 C., the active layer and second seed layer have a difference in lattice parameter of less than 0.005 Å, the active layer is crack-free, and the heterostructure has a specific contact resistance between the bonding layer and the first seed layer that is less than or equal to 0.1 ohmcm.