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Chris J Werkhoven

from Sonoita, AZ
Age ~76
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Also known as:
Christiaan Johannes Werkhoven, Christiaan J Werkhoven, Christiaan Joahannes Werkhoven, Christian Johannes Werkhoven, Christian J Werkhoven, Cj J Werkhoven, Christiaa J Werkhoven, Caroline Werkhoven, Christiaan N, Johannes Werkhoven Christiaan
Related to:
Julia WerkhovenCaroline S Werkhoven, 60Simon Werkhoven
Connected to:
Peter Werkhoven, 56Serena J Werkhoven, 47Brittany M Werkin, 33Dorothy M Werking, 94Paul M Werking, 72Stormie G Werking, 79Stephen A Werkle, 35Brianna A Werkman, 48Gerda C Werkman, 62Helen J Werkman, 95

Chris Werkhoven Phones & Addresses

  • Sonoita, AZ
  • Patagonia, AZ
  • 1514 La Vieve Ln, Tempe, AZ 85284 (480) 413-9751
  • Gilbert, AZ
  • Culver City, CA
  • Maricopa, AZ
  • 107 N Nielson Ln, Gilbert, AZ 85234 (602) 684-7975

Work

Company: Asm america inc. Address: 3440 E University Dr, Phoenix, AZ 85034 Phones: (602) 470-5700 Position: Cto Industries: Electronic Parts and Equipment

Emails

c***[email protected]

Business Records

Name / Title
Company / Classification
Phones & Addresses
Chris Werkhoven
CTO
ASM America Inc.
Electronic Parts and Equipment
3440 E University Dr, Phoenix, AZ 85034
Chris Werkhoven
CTO
ASM America Inc.
Electronic Parts and Equipment
3440 E University Dr, Phoenix, AZ 85034
Chris Werkhoven
CTO
ADVANCED SEMICONDUCTOR MATERIALS AMERICA, INC
Mfg Misc Industry Machinery · Special Industry Machinery, NEC · Electronic Parts and Equipment, NEC · Electric Equip & Wiring Merchant Whols
3440 E University Dr, Phoenix, AZ 85034
2500 NW 229 Ave, Hillsboro, OR 97124
3440 E University Dr  , Phoenix, AZ 85034
1209 Orange Street  , Wilmington, DE 19801
(503) 533-2167, (602) 437-1405, (602) 470-5700, (602) 437-4760

Publications

Us Patents

Apparatus And Methods For Isolating Chemical Vapor Reactions At A Substrate Surface

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US Patent:
7396415, Jul 8, 2008
Filed:
Jun 2, 2005
Appl. No.:
11/144510
Inventors:
Chantal J. Arena - Mesa AZ, US
Chris Werkhoven - Tempe AZ, US
Ron Bertram - Gilbert AZ, US
Assignee:
ASM America, Inc. - Phoenix AZ
International Classification:
H01L 21/00
C23C 16/00
C23C 14/00
US Classification:
118715, 118728, 15634533, 15634534, 15634551
Abstract:
An apparatus and method for processing a substrate is provided. The apparatus comprises a reaction chamber, a substrate holder within the chamber, and first and second injector components. The reaction chamber has an upstream end and a downstream end, between which the substrate holder is positioned. The substrate holder is configured to support a substrate so that the substrate is within a plane extending generally toward the upstream and downstream ends. The first injector component is at the upstream end of the chamber and is configured to inject a first thin gas curtain toward a substrate supported by the substrate holder. The first injector component is configured to inject the first curtain generally along a first plane that is parallel to a first side of the substrate. The second injector component is configured to inject a second thin gas curtain toward the first side of the substrate. The second injector component is configured to inject the second gas curtain generally along a second plane oriented at an angle with respect to the first plane.

In Situ Dielectric Stacks

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US Patent:
20020052124, May 2, 2002
Filed:
Nov 14, 2001
Appl. No.:
09/992215
Inventors:
Ivo Raaijmakers - Bilthoven, NL
Chris Werkhoven - Tempe AZ, US
International Classification:
H01L021/31
H01L021/469
H01L021/3205
H01L021/4763
US Classification:
438/778000, 438/791000, 438/792000, 438/787000, 438/585000, 438/591000
Abstract:
Multiple sequential processes are conducted in situ in a single-wafer processing chamber, particularly for forming ultrathin dielectric stacks of high quality. The chamber exhibits single-pass, laminar gas flow, facilitating safe and clean sequential processing. Furthermore, a remote plasma source widens process windows, permitting isothermal sequential processing and thereby reducing the transition time for temperature ramping between in situ steps. In exemplary processes, extremely thin interfacial silicon oxide, nitride and/or oxynitride is grown, followed by in situ silicon nitride deposition. Cleaning, anneal and electrode deposition can also be conducted in situ, reducing transition time without commensurate loss in reaction rates.

Apparatus And Methods For Isolating Chemical Vapor Reactions At A Substrate Surface

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US Patent:
20080248200, Oct 9, 2008
Filed:
Jun 6, 2008
Appl. No.:
12/134585
Inventors:
Chantal J. Arena - Mesa AZ, US
Chris Werkhoven - Tempe AZ, US
Ron Bertram - Gilbert AZ, US
Assignee:
ASM AMERICA, INC. - Phoenix AZ
International Classification:
C23C 16/00
US Classification:
42725528
Abstract:
An apparatus and method for processing a substrate is provided. The apparatus comprises a reaction chamber, a substrate holder within the chamber, and first and second injector components. The reaction chamber has an upstream end and a downstream end, between which the substrate holder is positioned. The substrate holder is configured to support a substrate so that the substrate is within a plane extending generally toward the upstream and downstream ends. The first injector component is at the upstream end of the chamber and is configured to inject a first thin gas curtain toward a substrate supported by the substrate holder. The first injector component is configured to inject the first curtain generally along a first plane that is parallel to a first side of the substrate. The second injector component is configured to inject a second thin gas curtain toward the first side of the substrate. The second injector component is configured to inject the second gas curtain generally along a second plane oriented at an angle with respect to the first plane. The angled flows of source gases have reduced interdiffusion volume above the substrate, preferably resulting in deposition substantially along a line extending across the center of the substrate. The substrate can be rotated during deposition to produce a substantially uniform film on the substrate.

Heterostructure For Electronic Power Components, Optoelectronic Or Photovoltaic Components

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US Patent:
20110127581, Jun 2, 2011
Filed:
Nov 30, 2010
Appl. No.:
12/956675
Inventors:
Jean-Marc Bethoux - Grenoble, FR
Fabrice Letertre - Meylan, FR
Chris Werkhoven - Gilbert AZ, US
Ionut Radu - Crolles, FR
Oleg Kononchuk - Theys, FR
International Classification:
H01L 29/205
C23C 16/02
B32B 9/00
B32B 37/00
C30B 23/02
US Classification:
257201, 118728, 428334, 156155, 156 64, 117106, 257E29091
Abstract:
The present invention relates to a support for the epitaxy of a layer of a material of composition AlInGaN, where 0≦x≦1, 0≦y≦1 and x+y≦1, having successively from its base to its surface; a support substrate, a bonding layer, a monocrystalline seed layer for the epitaxial growth of the layer of material AlInGaN. The support substrate is made of a material that presents an electrical resistivity of less than 10ohmcm and a thermal conductivity of greater than 100 WmK. The seed layer is in a material of the composition AlInGaN, where 0≦x≦1, 0≦y≦1 and x+y≦1. The seed and bonding layers provide a specific contact resistance that is less than or equal to 0.1 ohmcm, and the materials of the support substrate, the bonding layer and the seed layer are refractory at a temperature of greater than 750 C. or even greater than 1000 C. The invention also relates to methods for manufacturing the support.

Heterostructure For Electronic Power Components, Optoelectronic Or Photovoltaic Components

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US Patent:
20120241821, Sep 27, 2012
Filed:
Dec 1, 2010
Appl. No.:
13/513151
Inventors:
Jean-Marc Bethoux - Grenoble, FR
Fabrice Letertre - Grenoble, FR
Chris Werkhoven - Gilbert AZ, US
Ionut Radu - Crolles, FR
Oleg Kononchuck - Theys, FR
Assignee:
SOITEC - Bernin
International Classification:
H01L 29/205
H01L 21/205
C30B 23/02
B32B 15/02
B32B 18/00
US Classification:
257201, 428334, 117106, 438492, 257E29091, 257E2111
Abstract:
A heterostructure that includes, successively, a support substrate of a material having an electrical resistivity of less than 10ohmcm and a thermal conductivity of greater than 100 WmK, a bonding layer, a first seed layer of a monocrystalline material of composition AlInGaN, a second seed layer of a monocrystalline material of composition AlInGaN, and an active layer of a monocrystalline material of composition AlInGaN, and being present in a thickness of between 3 and 100 micrometers. The materials of the support substrate, the bonding layer and the first seed layer are refractory at a temperature of greater than 750 C., the active layer and second seed layer have a difference in lattice parameter of less than 0.005 Å, the active layer is crack-free, and the heterostructure has a specific contact resistance between the bonding layer and the first seed layer that is less than or equal to 0.1 ohmcm.

Situ Dielectric Stacks

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US Patent:
6348420, Feb 19, 2002
Filed:
Dec 23, 1999
Appl. No.:
09/471761
Inventors:
Ivo Raaijmakers - Bilthoven, NE
Chris Werkhoven - Tempe AZ
Assignee:
ASM America, Inc. - Phoenix AZ
International Classification:
H01L 2131
US Classification:
438769, 438770, 438775
Abstract:
Multiple sequential processes are conducted in situ in a single-wafer processing chamber, particularly for forming ultrathin dielectric stacks of high quality. The chamber exhibits single-pass, laminar gas flow, facilitating safe and clean sequential processing. Furthermore, a remote plasma source widens process windows, permitting isothermal sequential processing and thereby reducing the transition time for temperature ramping between in situ steps. In exemplary processes, extremely thin interfacial silicon oxide, nitride and/or oxynitride is grown, followed by in situ silicon nitride deposition. Cleaning, anneal and electrode deposition can also be conducted in situ, reducing transition time without commensurate loss in reaction rates.
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Chris J Werkhoven from Sonoita, AZ, age ~76 Get Report